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《Vacuum Science and Technology》 1993-02
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Zhen Hansheng(Department of Electron Engineering, Tsinghua University, Beijing)  
The microwave electron cyclotron resonance (ECR) plasma is one of the most important means for depositing thin films and microfabrications as well as surface modifications of materials. Due to its high ionization level and good chemical activity, it may used to realize the chemical vapor deposition of thin films on the substrates under the room temperature and the reaction ion etching. Therefore, it has important significance in developing of the microelectronics, opto-electronics and film sensor devices. In addition, using the principle of microwave ECR, the ion source without filament may improve the service life of source and increase the beam current density of the ion beam. It may be sure that the technology of ion source will be put to a new level by the development of the microwave ECR plasma. Obviously, it must play a role in progress of surface modification technology of materials, including material impurity by ion implantation. Since 1985, the multimagent plasma of microwave ECR has been developed for getting the plasma with large volume. The application prospects of these technologies are optimistic in film technology and surface modifications of materials. In this paper, we shall introduce the principle of the microwave ECR plasama and its applications.
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Chinese Journal Full-text Database 3 Hits
1 Ye Chao(physics,Science & Techn.College Suzhou University,215006);INVESTIGATION OF MATERIALS PROCESSED WITH THE MICROWAVE ECR PLASMA[J];苏州丝绸工学院学报;1998-03
2 Ye Chao;Ning Zhaoyuan(Thin Film Materials Laboratory,Institute of Physics Science and Technology,Suzhou University, Suzhou, 215006);The Investigation of Plasma Characteristics in Non-symmetric Axial Two-pole Field[J];真空科学与技术;1997-02
3 Ning zhaoyuan; Cheng Shanhua(Suzhou University,Suzhou 215000);MICROWAVE ECR PLASMA TECHNOLOGY AND IT'S APPLICATON IN CATERIALPROCESSING[J];微细加工技术;1995-01
Chinese Journal Full-text Database 5 Hits
1 Ye Chao Ning Zhaoyuan Gan Zhaoqiang(Physics Science and Technology Institute);GENERATION OF THE AXIAL MUTIPOLAR FIELD WITH PERMANETS[J];苏州大学学报(自然科学);1996-01
2 YE Chao; NIVG Zhaoyuan; GAN Zhaoqiang(Thin Film Material Laboratory, Physics Departrment of Suzhou University. Suzhou 215006);EXPERIMENTAL INVESTIGATION OF PLASMA CHARACTERISTICS IN AN AXIAL TWO POLE FLELD MWECR-CVD SYSTEM[J];核聚变与等离子体物理;1995-04
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4 Zhen Hansheng(Department of Electron Engineering, Tsinghua University, Beijing);THE TECHNOLOGY AND APPLICATIONS OF MICROWAVE ECR PLASMA[J];真空科学与技术;1993-02
5 Ning Zhaoyuan, Ren Zhaoxing (Institute of Plasma physics, Academia Sinica Hefei, China);ELECTRON CYCLOTRON RESONANCE(ECR) PLASMA INVESTIGATION AND APPLICATION[J];物理学进展;1992-01
【Secondary References】
Chinese Journal Full-text Database 5 Hits
1 Li Kewei (Department of Communication Engineering,Chengdu Institute of Technology,Chengdu 611730,China);Sputtering of SiGe(C) Films by ECR Plasma Assisted PVD at Low Temperature[J];半导体技术;2012-10
2 KONG Hua, FENG Jin-fu (School of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu 215500, China);The Effects of Macroscopic Parameters on Etch Rate of a-C:F Film[J];常熟理工学院学报;2011-08
3 SHEN Wu-lin,MA Zhi-bin,TAN Bi-song(School of Material Science and Engineering,Key Laboratory of Plasma Chemical and Advanced Materials of Hubei Province,Wuhan Institute of Technology,Wuhan 430074,China);The effects of magnetic field configuration on the electron parameters of microwave ECR plasma[J];武汉工程大学学报;2010-09
4 SANG Li-jun,CHEN Qiang(Beijing Key Laboratory of Plasma Physical and Material,Beijing Institute of Graphic Communication,Beijing 102600,China);Study of Diamond-like Carbon Films Prepared by ECR-RF Dual-Power Source Plasma Chemical Vapor Deposition[J];包装工程;2008-10
5 Cheng Shanhua, Ning Zhaoyuan, Ge Shuibing, Xu Dongmei , Zhang Keda , Zhang Xuemei (The Laboratory of Film Materials, The Department of Chemistry, Suzhou Universtiy, Suzhou);THE EFFECT OF LOW TEMPERATURE OXYGEN PLASMA ON SURFACE OF PVA MEMBRANE[J];高分子材料科学与工程;1998-06
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