Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of Vacuum Science and Technology》 2010-03
Add to Favorite Get Latest Update

Growth of Al_2O_3 Films by Pulsed Electron Cyclotron Resonance Plasma Deposition

Sang Lijun,Zhang Yuefei,Chen Qiang*,Li Xingcun(Key Laboratory of Beijing for Graphic & Packaging Material and Technology,Beijing Institute ofGraphic Communication,Beijing 102600,China)  
The Al2O3 films were grown by pulsed electron cyclotron resonance plasma deposition at room temperature on Si substrates with trimethylaluminum and oxygen as the precursor and oxidant,respectively.The impacts of film growth conditions on the quality of the film were studied.The microstructures and stoichiometries of the films were characterized with X-ray diffraction,X-ray photoelectron spectroscopy,scanning electron microscopy,atomic force microscopy and high resolution transmission electron microscopy.The results show that the fairly smooth,compact Al2O3 films with a thickness of 80 nm are amorphous.The sharp interface of the Al2O3 film and Si substrate was found to be well-defined.
【CateGory Index】: TB43
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved