Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of Vacuum Science and Technology》 2014-09
Add to Favorite Get Latest Update

Metalization of Sensitive Ceramics via Magnetron Sputtering

Wang Wenting;Wang Demiao;Department of Information Science & Electronic Engineering,Zhejiang University;R&D Center for Advanced Electronic Equipment,Zhejiang University Kunshan Innovation Institute;Suzhou Advanced Vacuum Electronic Equipment Co.,Ltd.;  
Here,weaddressed the metallization of negative temperature coefficient( NTC) thermal sensitive ceramics.The multilayered Ni /V-Ag thin films,consisting of a Ni-V transition and diffusion barrier layer( 500 nm) and Ag welding layer( 200 nm),were deposited successively on substrate of NTC ceramics by magnetron sputtering.The microstructures and interface adhesion of the multilayers and electrical properties of the NTC ceramics were characterized with scanning electron microscopy,and energy dispersive X-ray spectroscopy.The results show that the Nilayer makes a good Ohmic contact on the NTC ceramics,and significantly strengthens the interfacial adhesion.In addition,the Ni layer ensures a high soldering quality,not only because it effectively prevents Ag from diffusing into bulk ceramics,but also because it has a high temperature corrosion-resistance in no-lead soldering.
【CateGory Index】: O484.1
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 LI Jian,BAI Su-jie,TONG La-ga (Dept of Phys,Coll of Sci and Techn,Inner Mongolia University,Hohhot 010021,China );Gas sensing properties of Nd-doping nano-ZnO thin films[J];Journal of Transducer Technology;2004-05
2 LIAN Hong1, HOU Hou-qin2 (1. Guizhou Radio & TV University, Guiyang 550004, China; 2. Guizhou University, Guiyang 550004, China);Research on the Properties of SnO_2 Ultra-fine Particles Film Sensors[J];Electronic Components $ Materials;2005-08
3 Xiong Deping1,Zhou Shouli2(1.School of Physics and Optoelectronic Engineering,Guangdong University of Technology,Guangzhou 510006,CHN;2.College of Information Engineering,Zhejiang University ofTechnology,Hangzhou 310032,CHN);Preparation and Measurements of InP/GaAs(100) Heteroepitaxy[J];Optoelectronic Technology;2009-02
4 Dong Zhaoyue,Lang Ying,Jiang Wei,Hou Hongtao(Harbin Normal University);Research on Fabrication and Moisture Sensitivity of Device Based on a Single ZnO Nanowire a Semiconductor[J];Natural Science Journal of Harbin Normal University;2010-03
5 ZHANG Mei,HUANG Hui(Kunming Institute Physics,Kunming Yunnan 650223,China);The Analyses of Cadmium Zinc Telluride Wafers by Mechanical Chemical Polishing[J];Infrared Technology;2008-02
6 ZHAO Jun(Tianjin Aviation Electro-Mechanical Co.,Ltd.Tianjin 300308,China);The Research of the Semiconductor's Formula and Sintering Technology[J];New Technology & New Process;2008-12
7 LUO Yi-min~1, CHEN Zhen-hua~2, HUANG Pei-yun~3(1. School of Physics Science and Technology, Central South University, Changsha 410083, China;2. School of Materials Science, Hunan University, Changsha 410082, China;3. Institute of Powder Metallurgy, Central South University, Changsha 410083, China);Annealing behavior of Si_(1-x)Ge_x/Si heterostructure formed by Ge~+ implantation with X-ray diffraction[J];Journal of Central South University of Technology(Natural Science);2005-04
8 Peng Ying-cai①, Zhao Xin-wei②, Fu Guang-sheng③ ①College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China ②Department of Physics, Tokyo University of Science, Tokyo, Japan ③College of Physics Science and Technology, Hebei University, Baoding 071002, China;Reviews and Prospects of Semiconductor Physics[J];Nature Magazine;2004-06
9 LIANG Zhi-jun,HUANG Zhen-cheng,WANG Li, SHAO Yuan-zhi,HE Zhen-hui(School of Physics Science and Engineering,Sun Yat-sen University,Guangzhou 510275,China);The Monte Carlo Simulation for the Carbon Cluster and the Reconstruction of the Silicon (100) Surface[J];Acta Scientiarum Naturalium Universitatis Sunyatseni;2004-S1
10 Guo Xiang;Zhou Xun;Luo Zijiang;Wang Jihong;Zhou Qing;Liu Ke;Ding Zhao;College of electronic information science and technology , Guizhou University;School of Physics and Electronics Science, Guizhou Normal University;School of Education Administration, Guizhou University of Finance and Economics;;A-s Adsorbed InAs( 001) Surfaces and Its Irreversible Reconstruction Phase Transition[J];Chinese Journal of Vacuum Science and Technology;2013-12
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved