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Microstructure and thermoelectric properties of Al-doped ZnO thin films

LI Li1,CHANG Ren-Jie2,FANG Liang 3,CHEN Xi-Ming1,LIU Jun1(1.College of Mathematics and Physics,Chongqing University of Posts and Telecommunications,Chongqing 400065,China;2.Information Engineering Department,zhengzhou railway vocational&technical college, Zhengzhou,450052 China;3.Department of Applied Physics,Chongqing University,Chongqing 400044 China  
Al-doped ZnO(AZO) thin films were deposited on the TEP(thermoelictric power) transparent plane glass by DC reactive magnetron sputtering.The microstructure and thermoelectric power(TEP) of AZO thin films were studied.It was found that the films are polycrystalline with preferred orientation along the C-axis perpendicular to substrate surface.The thermal EMF linearly increases with increasing temperature difference(ΔT),and the higher resistance of samples,the lower the TEP.The effect of ambient temerature(near room temperature) on TEP is few and the TEP increases after annealing treatment.The experimental results were also demonstrated that TEP decreases slightly in magnetic field.
【Fund】: 重庆市科技攻关项目资助(No.CSTC2005AA4006-A6);; 重庆邮电大学青年教师科技基金项目资助(A2007-37)
【CateGory Index】: O484.4
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