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Preparation and Investigation of Indium、Tin Oxide Films Used on Photoelectronic Device

Zhou Zhibing;Zhang Yazeng;ZhangLikun; DuXiarizhi(Department of Pbysics )  
We deposite ITO(In2O_3、SnO_2) thin films on glass and silicon substrates us-ing the method of vacuum vapor deposition and oxidizing heat-treatment. The resis-tance of the films is 10 ̄(-2)Ωcm,the films are almost transparent to visible spectrum. Thetransparency is 94%(6328A).The microstructure of the films is analysed before andafter oxidizing heat-treatment by x-ray diffraction and SEM technique. The openvoItage of ITO/p-Si heterojunction reaches to 180mv, under the illiumi-nation of 100 mw/cm ̄2 AM1.5.The films prepared by this process can be used as thelaver to receive photoelectrons on photoelectric device effectively.
【CateGory Index】: TN150.4
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Chinese Journal Full-text Database 3 Hits
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