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《Micronanoelectronic Technology》 2017-02
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Single-Event Burnout Effect of 4H-SiC and 6H-SiC Power VDMOSFETs

Liu Zhongyong;Cai Li;Liu Xiaoqiang;Liu Baojun;Cui Huanqing;Yang Xiaokuo;Science College,Air Force Engineering University;The First Aeronautic Institute of Air Force;  
The single-event burnout(SEB)effects of 4H-SiC and 6H-SiC vertical double-diffused MOSFETs(VDMOSFETs)were compared and studied.The two-dimensional simulation structure of the devices was built,and the physical model and material parameters of the devices fabricated with different SiC materials were modified.The characteristics simulation of the two-dimensional devices was carried out with Silvaco TCAD software,and the drain current curves and electric field distribution profiles of the two devices before and after the SEB effect were obtained.The research results show that the SEB threshold voltages of the 4H-SiC and 6H-SiC VDMOSFETs are 335 V and 270 V,respectively.Besides,when the SEB effect occurs,the maximum electric field intensities of the two devices are 2.5 MV/cm and 2.2 MV/cm,respectively.The4H-SiC material is better than the 6H-SiC material in the aspect of anti-SEB effect.The obtained results can provide a reference for the design and application of the anti-radiation power device.
【Key Words】: silicon carbide(SiC) single-event burnout(SEB) vertical double-diffused MOS FET(VDMOSFET) SEB threshold voltage two-dimensional device simulation
【Fund】: 国家自然科学基金资助项目(11405270)
【CateGory Index】: TN386
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