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《Micronanoelectronic Technology》 2017-02
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Influence of the Au Catalyst Rapidly Annealed at Different Temperatures on β-Ga_2O_3 Nanowire Arrays

Cao Yisen;Deng Jinxiang;Cui Min;Kong Le;Chen Liang;Shen Zhen;College of Applied Sciences,Beijing University of Technology;  
The β-Ga_2O_3 nanowire arrays were prepared by the chemical vapor deposition(CVD)method with Au as the catalyst.The density and size of the Au catalyst were changed with the temperature of the rapid annealing treatment.The morphology and crystal structure of the β-Ga_2O_3 nanowire arrays were controlled by the morphology of the Au catalyst which further affected the photoluminescence properties of the nanowire arrays.The X-ray diffraction(XRD)analysis shows that the synthesized product is β-Ga_2O_3 of the monoclinic structure,and the scanning electron microscope(SEM)test results show that with the increase of the rapid annealing temperature,the morphology of the Au catalyst changes significantly.As the rapid annealing treatment carried out for 120 s at 900 ℃,the grown nanowire array is compact,the nanowire is of small average diameter and the diameter of the particles distributes uniformly.The photoluminescence spectrum of the β-Ga_2O_3 nanowire arrays has stable ultraviolet and blue photoluminescence peaks at 393 nm and 454 nm under the excitation of 316 nm at the room temperature,respectively.The luminescence intensity of the blue light compared to that of the ultraviolet light decreases relatively with the increase of the rapid annealing treatment temperature of the Au catalyst,while the overall photoluminescence intensity increases.
【Key Words】: gallium oxide catalyst nanowire array photoluminescence self-trapped exciton
【Fund】: 国家自然科学基金资助项目(60876006 60376007);; 北京市教育委员会科技计划重点资助项目(KZ201410005008)
【CateGory Index】: TN304.21;TB383.1
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