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《Micronanoelectronic Technology》 2017-02
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Sensitive Characteristics of the Sensitive Devices Prepared by WO_3 and CH_3NH_3PbI_3 Perovskite

Jin Huijiao;Li Yan;Zeng Yan;Hua Zhongqiu;Tian Hanmin;School of Electronic Information Engineering,Hebei University of Technology;Tianjin Key Laboratory of Electronic Materials and Devices;  
It is an important research direction of gas sensors that the light stimulates the change of the semiconductor carrier concentration.At present,the spectrum of the ultraviolet light is mainly adopted in the research,while the common visible light is not applied.The WO_3 nanopowder and CH_3NH_3PbI_3 perovskite precursor solution were fabricated through the sol-gel method in this experiment,agas sensor sensitive to the visible light was obtained with the WO_3 nanopowder and CH_3NH_3PbI_3 perovskite precursor solution,and the gas sensitive characteristics of the device in reducing gas NH3 were achieved.The WO_3 nanopowder and CH_3NH_3PbI_3 perovskite were charac-terized by the scanning electron microscope(SEM),X-ray diffractometer(XRD)and ultraviolet-visible light spectrophotometer,and the gas-sensing characteristics of the device were tested with the self-made dynamic distributing equipment.The results show that the novel gas sensor is more sensitive than the pure WO_3 gas sensor in NH_3.Besides,the gas sensor is of good photosensitivity,indicating the potential application prospect of the gas sensor.
【Fund】: 中国博士后科学基金资助项目(2015M581282);; 河北省留学人员择优资助项目(C2015003040);; 天津市自然科学基金面上资助项目(15JCYBJC52100);; 河北省自然科学基金青年项目(F2016202214)
【CateGory Index】: TP212;TN304
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