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《Micronanoelectronic Technology》 2017-02
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Al Ion Implantation Technology for 4H-SiC at Room Temperature

Wang Dongyu;Lin Wenkui;Zeng Chunhong;Sun Yuhua;Ju Tao;Zhang Baoshun;Zhang Xinping;School of Material Science and Engineering,Nanjing University of Science and Technology;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences;  
The Al ion implantation depth and concentration distribution in the n-type 4H-SiC material as functions of the implantation angle,buffer layer thickness,implantation energy and dose were studied by the simulation.The implantation experiment was performed with multiple energies and doses at room temperature to obtain the uniform ion concentration distribution,and the implantation depth is 500 nm.The Al ions were activated by annealing at 1 650 ℃ and 1 750 ℃with the upper and lower surfaces of the SiC samples protected by SiC wafers after the implantation.The influence of the temperature on the activation effect was researched.Besides,the influences of the implantation condition and annealing protection method on the surface roughness of the SiC samples were investigated.After the activation,a Ni layer was deposited on the SiC samples,and then the material was annealed.The effect of the activation concentration on the p-SiC Ohmic contact formed by Ni and Al implantations was studied.In the experiment,the damage induced by the implantation was characterized by Raman spectrum,the surface roughness after annealing was inspected by the atomic force microscope(AFM)and the activation effect was characterized by Hall test,respectively.The experimental results show that with a SiO_2 film of100 nm thickness as the buffer layer and the implantation tilt angle of 4°,the p-SiC samples with the surface roughness of 0.862 nm and the activation concentration of 4.25×10~(19) cm~(-3) can be obtained by annealing at 1 750℃ with the upper and lower surfaces protected by SiC wafers.The method can provide a reference for the design of SiC-based devices including pin diodes,JBS,MOSFET,JFET,BJT and so on.
【Key Words】: SiC ion implantation implanted damage Raman spectrum ohmic contact
【Fund】: 江苏省基础研究计划青年基金项目(BK20150370);; 江苏省科技支撑计划(工业)项目(SBE2014000517)
【CateGory Index】: TN305.3
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