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《Micronanoelectronic Technology》 2017-02
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Growth of the Selective Epitaxial Ge Film on Si-Based Substrates

Wu Xipeng;Wang Guilei;Li Zhihua;Tang Bo;Zhang Qingzhu;Wu Cinan;Yan Jiang;College of Big Data and Information Engineering,Guizhou University;Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences;  
Through adjusting the flow rates of GeH_4 and HCl etching gas,the epitaxial Ge film was grown on the patterned Si/SiO_2 substrate with40 nm low temperature Ge buffer layer by the reduced pressure chemical vapor deposition(RPCVD)system.Then,the epitaxial Ge film was annealed for 20 min in the H_2 atmosphere to reduce the dislocations and defects in the epitaxial Ge layer.The dislocation pits density of the epitaxial Ge layer was checked by using the chemical etching method,and the epitaxial Ge crystal quality was characterized and analyzed with the scanning electron microscope(SEM),atomic force microscopy(AFM)and high resolution X-ray diffraction(HRXRD).The testing results show that the dislocation density of the epitaxial Ge layer in the circular area with a diameter of 10μm on the patterned substrate is as low as 1.3×10~6/cm~2,and the average full-width-at-half-maximum(FWHM)of the diffraction peak for the epitaxial Ge layer with the thickness of about 1.5μm is 240 arcsec.The surface roughness of the Ge film is as low as 0.2 nm measured by the AFM after the chemical mechanical polishing(CMP)process.The Ge film material is expected to be integrated in silicon-based detectors and other silicon-based optoelectronic devices.
【CateGory Index】: TN304.054
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