Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Beijing Institute of Machinery》 2005-01
Add to Favorite Get Latest Update

Reduction of dark-current of ITO/PTCDA/P-Si/Al photoelectric detector

LIU Feng-min,SONG Zhen,GAN Run-jin ( Division of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China)  
Organic/inorganic homoplastic heterojunction is a new kind of photoelectronic device with good compatibility, efficient photoelectric conversion and simple fabrication, so it can be widely used in the future. After the organic material of PTCDA was deposited on the inorganic semiconductor of P-Si substrate to form organic/inorganic homoplastic heterojunction, the dark-current of ITO/PTCDA/P-Si/Al photoelectric detector is reduced effectively by various ways of technological process. The order magnitudes of the current is 10-9 A. The way of current reduction is researched. The result of the study shows that the main ingredient of the dark-current is generation-recombination current in depletion region.
【Fund】: 国家自然科学基金资助项目[69676010]
【CateGory Index】: TN29
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved