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《The World of Inverters》 2010-01
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Application of High-power Semiconductor Devices in Megawatt Wind Power Converter

Zheng Wenying Wang Guoqiang  
The paper briefly introduces the development trend of wind power generation and the structure and features of full power wind power generation system.Combined with the operation principle and performance of IGBT and IGCT,the application of IGBT and IGCT on wind power converter is analyzed.Ultimately concluded,IGCT is more suitable for wind power converter applications,depend on its significant features and advantages,including voltage and power levels,efficiency,reliability and the structure design of converter,etc.
【CateGory Index】: TM614;TM46
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【Citations】
Chinese Journal Full-text Database 2 Hits
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【Co-citations】
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1 Tong Yibin Zhang Chan (Beijing Jiaotong University Beijing 100044 China);Influence of Anti-Paralleled Diode on the Turn-Off Performance of IGCT[J];Transactions of China Electrotechnical Society;2007-11
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