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《Journal of Beijing Normal University(Natural Science)》 2005-04
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PERFORMANCE DEGRADATION OF MULTI-QUANTUM WELL GaAs SOLAR CELLS AS A FUNCTION OF PROTON IRRADIATION FLUENCE 1×10~9 cm~-2 TO 2×10~(13) cm~(-2)

Yang Jingbo~1 Wang Rong~(1,2,3) Sun Xufang~1 Liu Yunhong~1 Duan Liying~1( 1)Institute of Low Energy Nuclear Physics; 2)Key Laboratory of Radiation Beam Technology and Materials Modification of Ministry of Education: Beijing Normal University; 3)Beijing Radiation Center: 100875, Beijing, China)  
The performance degradation of multi-quantum well (MQW) GaAs solar cells is studied. The cell material is InGaAs/GaAsP grown on GaAs substrates. The fluence of 2 MeV proton irradiation varies from 1×10~(9) cm~(-2) to 2×10~(13) cm~(-2). The results show that the degradation rate of short circuit current (I_(sc)), open circuit voltage (V_(oc)) and maximum power output (P_(max)) increases as the irradiation fluence increases; the degradation of I_(sc) is faster than that of V_(oc) for the fluence above 3×10~(12) cm~(-2); but the change of V_(oc) is faster than that of I_(sc) for the fluence below 3×10~(12) cm~(-2) due to the quantum well structure damage; and the spectral response of MQW GaAs solar cells obviously decreases in whole wavelength as the irradiation fluence increases and the quantum well spectral response disappears in the wavelength 0.9~1.0()μm after a 2×10~(13) cm~(-2) proton irradiation.
【Fund】: 北京市优秀人才基金资助项目;; 北京市自然科学基金资助项目(1052009)
【CateGory Index】: TM914
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