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《Journal of Jiangxi Normal University (Natural Sciences Edition)》 2004-01
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Comparison of WKB Method and Transfer Matrix Method Used in Silicon Field Emission

ZHANG Zu-xing~(1,2),SANG Ming-huang~(1,2),ZHAN Li~2,YE Zhi-qing~1,NIE Yi-you~1 (1.Institute of physics and communication & Electronics, Jiangxi Normal University, Nanchang 330027; 2,Department of Applied Physics, Shanghai Jiaotong University, Shanghai 200240,China)  
Due to band bending of semiconductor surface applied electric field, the electron emission on silicon surface can be considered as a tunneling process through a potential well. In the article, we calculate the quantum energy levels and emission current,respectively using WKB method and the transfer matrix method .By Comparing the conclusion from WKB method and transfer matrix method, we find that the result from transfer matrix is closer to that from FN theory than WKB method. This method may be useful in the analysis on basic physical qualities and parameters of quantum well, such as the characteristics and the quantization effect of an electron in the complicated potential.
【CateGory Index】: O472
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1 Huang Qing'an(Microelectronics Center, Southeast University, Nanjing 210096)Received 20 January 1994,revised manuscript received 15 June 1994;Influence of Surface Potential Well on Field Emission from Silicon[J];CHINESE JOURNAL OF SEMICONDUCTORS;1995-08
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