Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Jiangxi Normal University (Natural Sciences Edition)》 2005-01
Add to Favorite Get Latest Update

Application and mechanism analysis of pulsed laser deposition

JIANG Hui-ming, YE Zhi-qing, ZHEN Min-shen (key laboratory of Photoelectronics&Telecommunication of Jiangxi Province,Nanchang 330027,China)  
Pulsed laser deposition is the most widely-used and promising deposition technique for the growth of thin films developed in the recent years. In this paper, we have elaborated the mechanism and characteristics of pulsed laser deposition technique,the growth process of film includes:1) Plasma generation caused by light-material interaction;2) Plasma expansion towards substrate;3) Plasma recondensation on the substrate and growing thin films. Influence of the main deposition parameters such as energy density , deposition pressure and conditions of the substrate on the quality of thin films are investigated. We also have introduced its application in preparing semiconductor, high Tc superconductor, diomand and bioceramic thin films.
【CateGory Index】: TN24
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 2 Hits
1 Hu Chunxiang,Wu Yuzhi(Jiangxi Blue Sky University Nanchang,Jiangxi 330098,China);Simulation of the dynamics process of pulsed laser deposition of ZnO thin film[J];Journal of Hainan Normal University(Natural Science);2008-02
2 HU Chun-xiang WU Yu-zhi(Jiangxi Blue Sky University Nanchang,Jiangxi,330098 China);Simulation of the Dynamics Process of Pulsed Laser Deposition of ZnO Thin Film[J];Journal of Jiangxi Blue Sky University;2008-02
【Citations】
Chinese Journal Full-text Database 8 Hits
1 Lü Jianguo,Ye Zhizhen,Huang Jingyun,Zhao Binghui and Wang Lei(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China);Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films[J];Chinese Journal of Semiconductors;2003-07
2 Huang Shulai 1,Ma Jin 1,Liu Xiaomei 2,Ma Honglei 1,Sun Zheng 1 and Zhang Deheng 1(1 School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) (2 School of Computer,Shandong University,Ji'nan 250100,China);Preparation and Properties of Conducting Transparent ZnO-SnO_2 Films Deposited at Room Temperature[J];Chinese Journal of Semiconductors;2004-01
3 Tong Xinglin,Zheng Qiguang,Hu Bing,Qin Yingxiong,Xi Zaijun and Yu Benhai(State Key Laboratary of Laser Technology,Huazhong University of Science and Technology,Wuhan 430074,China);Growth of GaN Thin Films on Si(111) Substrates with AlN Buffer Layer by Current Discharge Assisted Pulsed Laser Deposition[J];Chinese Journal of Semiconductors;2004-02
4 GE Shuibing 1,CHENG Shanhua 1,NING Zhaoyuan 1,SHEN Mingraong 1, GAN Zhaoqiang 1,ZHOU Yongdong 1,CHU Junhao 2 (1.Films Material Laboratory of Suzhou University,Suzhou,215006,China; 2.Shanghai Institute of Technical Physics,Chinese Academy of Scie;Effects of Oxygen Pressure and Substrate Temperature on ZnO∶Al Film by Pulsed Laser Deposition[J];JOURNAL OF FUNCTIONAL MATERIALS;2000-S1
5 CHEN Chuan zhong 1,YAO Shu shan 1,BAO Quan he 1,ZHANG Liang 1,LEI Ting quan 1,2 (1.School of Materials Science and Engineering,Shandong University,Ji’nan 250061,China; 2.School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China);A review of hydroxyapatite films deposited by pulsed laser[J];Laser Technology;2004-01
6 Huang Jipo; Wang Lianwei; Gao Jianxia; Lin Chenglu(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy,The Chinese Academy of Sciences, Shanghai 200050)Zhou Yanping(Shanghai Institute of Ceramics, The Chinese Aca;Investigation of AIN Thin Films Prepared by Pulsed Excimer Laser Deposition[J];CHINESE JOURNAL OF LASERS;1999-09
7 Xu Huaping;Xin Huoping;Zheng Lirong; Lin Chenglu(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050)Gu Mei;Cao Zechun(Faculty of Materials,Shanghai University,Shanghai;Highly Electrical Conductive BaRuO_3 Thin Film and Its Preparation by Pulsed Laser Deposition[J];CHINESE JOURNAL OF LASERS;1996-01
8 Wang Zhaoyang~*, Hu Lizhong, Sun Jie, Meng Qingduan, Su Yingmei (Department of Physics, Dalian University of Technology, Dalian 116023, China);Laser Molecular Beam Epitaxy and Application in Growth of ZnO Thin Films[J];Journal of The Chinese Rare Earth Society;2003-S1
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 CU Chun-xiang,TAO Xiang-yang(School of Physical & Comm.Tech,Jiangxi Normal Univ.,Nangchang 330027,China);Study of Structure and Optical Properties of ZnO Prepared by Pulsed Laser Deposition[J];Journal of Anyang Teachers College;2006-02
2 LI Lin,JI Zheng-guo,ZHANG Ya-hong,HAN Wei-zhi(State Key Lab.for Silicon Materials,Zhejiang University,Hangzhou 310027,CHN);UV Photoconductive Mechanism of ZnO Thin Films[J];Semiconductor Optoelectronics;2006-01
3 YANG Bing-chu,GAO Fei,LIU Xiao-yan(College of Physics Science and Technology,Central South University,Changsha 410083,CHN);Effect of Annealing in N_2 on Structure and Optical Properties of ZnO Thin Films[J];Semiconductor Optoelectronics;2007-03
4 DU Peng,QIU Mei-yan,SUN Yi-cai,PAN Guo-feng(Microelectron Research Institute,Hebei University of Technology,Tianjin 300130,China);Study on Gas Sensing Properties of SnO_2-CuO Thin Films Deposited by Magnetron Sputtering[J];Semiconductor Technology;2007-09
5 Zhang Huafu,Yuan Yuzhen,Liu Hanfa,Liu Yunyan (School of Physics and Optic-Electronic Information,University of Technology of Shandong,Zibo 255049,China);Advancement of Al Doped ZnO Flexible Transparent Conducting Thin Film[J];Semiconductor Technology;2008-06
6 CHEN Zheng-caia,b,ZHUGE Lan-jianb,c,WU Xue-meia,b(a.Department of physics;b.The Key Laboratory of Thin Films of Jiangsu;c.Analysis and Testing Center,Suzhou university,Suzhou 215006,China);Study on DMSs-ZnO Doped Transition-Metal[J];Micronanoelectronic Technology;2007-01
7 Yu Xuhu1,Ma Jin1,Ji Feng1,Wang Yuheng1,Wang Cuiying2,and Ma Honglei1(1 School of Physica and Microelectronics,Shandong University,Ji’nan 250100,China) (2 Laboratory of Physics,Taishan Medical University,Tai’an 271000,China);Properties of Transparent Conducting ZnO∶Ga Films Prepared by RF Magnetron Sputtering[J];Chinese Journal of Semiconductors;2005-02
8 Peng Xingping,Wang Yinyue,Fang Zebo,and Yang Yinghu(School of Physics Science and Technology,Lanzhou University,Lanzhou 73000,China);Effect of Indium Content on Structural and Photoluminescent Properties of Doped ZnO Thin Films[J];Chinese Journal of Semiconductors;2005-04
9 Wang Yuheng,Ma Jin,Ji Feng,Yu Xuhu,Zhang Xijian,and Ma Honglei(School of Physica and Microelectronics,Shandong University,Jinan 250100,China);Preparation and Photoluminescence Characteristic of SnO:Sb Thin Films[J];Chinese Journal of Semiconductors;2005-05
10 Huang Li,Li Xifeng,Zhang Qun,Miao Weina,Zhang Li,Zhang Zhuangjian, and Hua Zhongyi(Department of Materials Science,Fudan University,Shanghai 200433,China);Preparation of Molybdenum-Doped Indium Oxide Thin Films by Channel Spark Ablation[J];Chinese Journal of Semiconductors;2005-11
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 LIU Yan-mei,ZHAO Zong-yan, LI Ai-xia,YANG Kun-tang,HAN Jia-hua,SUN Zhao-qi (Department Physics,Anhui University,Hefei 230039,China);Study of oxidization of MgF_2 by the rietveld method of whole pattern fitting[J];Journal of Anhui University(Natural Sciences);2002-04
2 WANG Xin qiang,DU Guo tong,JIANG Xiu ying,WANG Jin zhong,YANG Shu ren (National Integrated Optoelectronics Laboratory,Department of Electronic Engineering,Jilin University,Changchun 130023,China);Advances in Research on ZnO Film[J];SEMICONDUCTOR OPTOELECTRONICS;2000-04
3 CHEN Jian-guo,GUO Qun-ying,XING Kun-shan( The 214th Institude of Chinese Ordnance Industry, Bengbu 233042,China );Preparation of microbridge for microbolometerand the research of vanadium oxides thin films[J];Semiconductor Technology;2002-01
4 JIA Jia(Shanghai Institute of Technical Physics, Shanghai 200083, China);Sputtering technology of nano thin films[J];Semiconductor Technology;2004-07
5 Yang Yasheng (Chongqing Optoelectronics Research Institute,Chongqing 400060);Bolometer Infrared Focal Plane Arrays[J];SEMICONDUCTOR TECHNOLOGY;1999-02
6 CHEN Han hong,YE Zhi zhen (State Key Laboratory of Silicon Material,Zhejiang University,Hangzhou 310027,China);Development of ZnO thin film doping and transition[J];Semiconductor Information;2001-02
7 GUO Ai-bo,LIU Yu-ping,CHEN Feng,LI Bin,DAN Min,LIU Ming-hai,HU Xi-wei(College of Electrical & Electronics Engineering,Central China University of Science and Technology,Wuhan 430074,China);Research of ZnO Thin Films Grown by Plasma-enhanced Chemical Vapor Deposition[J];Surface Technology;2006-06
8 LI Xiao-lan, OUYANG Chu-ying, YE Zhi-qing, DENG Hai-dong, RAO Feng, XIONG Zhi-hua (Jiangxi Normal University, Jiangxi Optic-Electronic & Communication Key Lab, Nanchang 330027,China);Application of PLD System[J];Journal of Jiangxi Normal University (Natural Sciences Edition);2004-06
9 ZHOU Wei ZHU Lian xiang ( Department of Telecommunication Engineering, Chongqing University of Post and Telecommunications, Chongqing 400065);Study on the Microstructure of VO_x Thin Films Prepared by Vacuum Annealing Method[J];Journal of Chongqing University of Posts and Telecommunications;2000-04
10 YANG Fan, WEN Yu-mei*, ZHENG Min, LI Ping College of Opto-Electronic Engineering, The Key Laboratory for Optoelectric Technology & Systems, Ministry of Education, Chongqing University, Chongqing 400030, China;Magnetoelectric Response of Magnetostrictive/Piezoelectric/Magnetostrictive Laminate Composite[J];Chinese Journal of Sensors and Actuators;2006-06
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 HE Wei, JIAO Bin-bin, XUE Hui-qiong, OU Yi, CHEN Da-peng, YE Tian-chun (Silicon Devices and Integrated Technology Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China);Development of Uncooled IRFPA[J];Equipment for Electronic Products Manufacturing;2008-05
【Secondary Citations】
Chinese Journal Full-text Database 7 Hits
1 Li Jianguang, Ye Zhizhen, Wang Lei, Zhao Binghui, Yuan Jun, Que Duanlin(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Received 3 May 1998, revised manuscript received 12 June 1998;Characterization of ZnO Thin Film Treated With High Temperature for Buffer Layer of GaN on Silicon Substrate[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-10
2 XIU Xiang qian 1,Shinji NOZAKI 2,Junichi SHIMABUKURO 2, Takayuki IKEGAMI 2,WANG Da zhi 2 and TANG Hong gao 1[KH2D](1 Department of Materials Science and Engineering,University of Science and Technology of China,Hefei 230026,China) (2 Univers;Optical Properties and Growth of Cubic GaN Buffer Layers on Sapphire by Radio Frequency Plasma CVD[J];Chinese Journal of Semiconductors;2001-02
3 YE Zhi-zhen,CHEN Han-hong,LIU Rong,ZHANG Hao-xiang and ZHAO Bin-hui(National Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 3100 27,China);Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron Sputtering[J];Chinese Journal of Semiconductors;2001-08
4 Yang Yingge 1,Ma Honglei 1,Xue Chengshan 2,Zhuang Huizhao 2,Hao Xiaotao 1 and Ma Jin 1Project supported by National Natural Science Foundation of China (No.6771006) Received 9 June 2002,revised manuscript received 6 August 2002○c 2003 The Chinese Institute of Electronics(1 School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) (2 Institute of Semiconductors,Shandong Normal University,Ji'nan 250014,China);Preparation and Properties of GaN Films on GaAs (110) Substrates[J];Chinese Journal of Semiconductors;2003-04
5 Li Jianguang;Ye Zhizhen; Zhao Binghui and Yuan Jun (State Key Asb.of Silicon Materials,Zhejiang University, Hangzhou 310027)Received 10 March 1996, revised manuscript received 4 May 1996;Preparation and Characterization of High-Quality ZnO Film on Silicon Substrate by DC Reactive Magnetron Sputtering[J];CHINESE JOURNAL OF SEMICONDUCTORS;1996-11
6 Ma Jin, Ji Feng, Li Shuying, Ma Honglei(Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100);Affect of Heat Treatment on Structure and Electrical Properties of Zinc Oxide Films[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-06
7 Li Meiya1,3 Wang Zhonglie2 Lin Kuixun3 Xiong Guangcheng1 Fan Shoushan4(1,3Department of Physics, Peking University,Beijing,100871,China)(2Institute of Microelectronics, Peking University,Beijing,100871,China)(3Center of;The Pulsed Laser Deposition Technique and its Applications in the Study of Functional Thin Films[J];JOURNAL OF FUNCTIONAL MATERIALS;1998-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved