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《Journal of Jiangxi Normal University(Natural Sciences Edition)》 2007-01
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The Study on the Preparation of PZT Ferroelectric Thin Films and Its Electric Properties

WANG An-fu,WANG Guo-qiang,WANG Shao-ming (Department of Physics,Yunyang Teachers College,Danjiangkou Hubei 442700,China)  
On the base of LaNiO3,Pb(Zr0.5,Ti0.5)O3(PZT)was made by Sol-Gel.The study was made on the influence of annealing temperature on the structure and properties of thin films and the analysis by means of X-ray told us that under the 600 ℃ annealing temperature PZT thin films turned into perovskite phase and(100) preferential orientation PZT thin films were obtained under the preparation of(100) preferential orientation base electrode.The testing leads to such results: the remnant polarization strength of PZT thin films with LaNiO3 as its base is Pr=26.83 μC/cm2,its coercive field value is Ec=30.43 kV/cm,its dielectric constant is ε=5 509 and its dielectric loss is 0.203.
【Fund】: 湖北省教育厅科学技术研究项目(D200560005);; 国家高技术研究发展计划(2003BA310A28)资助
【CateGory Index】: TM221
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