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《Materials Review》 2004-01
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A Review of Research on Devices Using nc-Si:H Film

WEI Wensheng~(1,3)XU Gangyi~2 WANG Tianmin~1 ZHANG Chunxi~3(1 Center of Material Physics and Chemistry, School of Science, Beihang University(BUAA), Beijing 100083, China;2 Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Science, Shanghai 200050, China; 3 Institute of Opto-Electronics Technology, Beihang University(BUAA), Beijing 100083, China)  
Research advances in electronic devices and photoelectricity transition devices such as tunneling diode, heterojunction diode, varied capacitance diode, single electronic transistor, solar cell and light emitting diode(LED)using hydrogenated nano-crystalline silicon(nc-Si:H)films are reviewed in this paper. The relation ship between the performance of these devices and the structures of nc-Si:H films is analyzed. The advantages of these novel devices are pointed out.
【Fund】: 863—***项目;;高校博士点基金(200220006037);; 北京航空航天大学博士生基础性研究基金
【CateGory Index】: TB43
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