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《Materials Review》 2005-01
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Research and Application of Luminescence from Defects in Silicon

YUAN Zhizhong YANG Deren (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027)  
The advancement of information technology requires photon,taking place of electron,to conduct data inside very large scale integrated circuits.Therefore silicon based light-emitter is one of the great scientific chal- lenges at present and crucial to optoelectronics integration.The luminescence of defects in silicon is of great impor- tance and has stimulated extensive interests.Based on the understanding of dislocation-related luminescence,the re- search and application state-of-the-art of defect-related luminescence in silicon has been reviewed.
【Fund】: 国家杰出青年科学基金(项目编号:60225010);; 国家自然科学基金重点项目(项目编号:5003210)
【CateGory Index】: TN304
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【Co-citations】
Chinese Journal Full-text Database 3 Hits
1 Li Cheng,Lai Hongkai,and Chen Songyan(Research Center for Semiconductor Photonics,Department of Physics,Xiamen University,Xiamen 361005,China);Influence of Annealing Temperature on Luminescence of β-FeSi_2 Particles Embedded in Silicon[J];Chinese Journal of Semiconductors;2006-01
2 LI Cheng, LAI Hong-kai, CHEN Song-yan(Research Center for Semicond. Photon., Dept. of Phys., Xiamen University, Xiamen 361005, CHN);Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy[J];半导体光子学与技术(英文版);2005-04
3 GUO Feng1,2,ZHANG Jing3,GONG Min1,2,LIU Lun-cai3,YANG Chen1,2,TAN Kai-zhou3,SHI Rui-ying1,2(1.Department of Microelectronics,Sichuan University,Chengdu,610064;2.Key Lab of Microelectronics technology of Sichuan province,Chengdu 610064;3.Sichuan Institute of Solid-state Circuit,CETC,Chongqing 400060);Photoluminescence Studies on the Defects of SiGe/Si Heterojunction[J];The Journal of Light Scattering;2007-03
China Proceedings of conference Full-text Database 2 Hits
1 Michio Tajima Hiroki Sugimoto Masaaki Inoue Kiyoto Araki Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency 3-1-1 Yoshinodai,Sagamihara 229-8510,Japan;Photoluminescence Characterization of Electrically Active Intra-Grain Defects in Multicrystalline Silicon[A];[C];2007
2 YANG Yu~1,WANG Chong~1,XIONG Fei~1,LI Liang~1,YANG Jie~1,WEI Dong~1,Jiming Bao~2 (1.Institute of Optoelectronic Information Materials,Yunnan University,Kunming 650091,China; 2.Department of Electrical and Computer Engineering,University of Houston,4800 Calhoun Road, Houston TX 77204,USA);Systematic study on luminescence centers in silicon created by self-ion implantation and thermal annealing[A];[C];2010
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