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《Materials Review》 2005-01
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Research Progress of GaN-based LED on Silicon

HONG Wei ZHU Liping YE Zhizhen TANG Haiping NI Xianfeng ZHAO Zhe (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027)  
GaN/Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost,high thermal conductivity,potential applications in the integration of the microelectronics and opto- electronics,mature technology in growth of Si single crystal with large diameter.However,the large thermal mis- match between GaN and Si leads to the formation of cracks in the epitaxial GaN films,which is a major problem in fabricating LEDs and other structure of electronic devices.Recently,the GaN quality has improved drastically with the development of technique.Some groups have succeeded in manufacturing LED on silicon.In this paper,the crack- ing problems of GaN film and research progress of GaN-based LED on Si are outlined.
【Fund】: 国家重点基础研究专项经费“973”资助(G20000683-06);; 教育部留学回国人员启动基金 教外司留[2003]406号;; 浙江省自然科学基金(M503183)
【CateGory Index】: TN312.8
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Chinese Journal Full-text Database 2 Hits
1 RUAN Yu-jiao1,ZHANG Xiao-ying2,CHEN Song-yan1,LI Cheng1,LAI Hong-kai1,TANG Ding-liang3(1.Department of Physics,Semiconductor photonics research center,Xiamen University,Xiamen 361005,China;2.Department of mathematics and Physics,Xiamen University of Technology,Xiamen 361024,China;3.College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China);GaN LED/metals/Si structure fabricated by bonding and laser-lift off[J];Journal of Optoelectronics.Laser;2010-08
2 LIU Yi-bing1、2 (1.College of Electrical and Information Engineering, Hunan University, Changsha,Hunan 410082; 2.Department of Mechanical and Electric, Shaoyang Professional-Technology College, Shaoyang, Hunan 422000, China);Study Based on Enhancing the Light Emitting Efficiency of HBLED[J];Advanced Display;2007-11
Chinese Journal Full-text Database 10 Hits
1 LIU Bao-lin (Department of Physics,Xiamen University,Xiamen 361005,CHN);GaN Polarity and Its Measurement and Application[J];Semiconductor Optoelectronics;2002-02
2 YUAN Zhi-jun, GAO Wen-sheng, TANG Xin-long, XING Qi-jiang (School of Physics, Peking University, Beijing 100871, CHN);Research Advances in Wafer Bonding Technique of GaN Material[J];Semiconductor Optoelectronics;2003-06
3 ZHENG Dai-shun1, QIAN Ke-yuan1, LUO Yi(1,2) (1. Laboratory on Semiconductor Lighting,Graduate School at Shenzhen,Tsinghua University,Shenzhen 518055,CHN; 2. State Key Laboratory on Integrated Optoelectronics,College of Electr onic Engineering,Tsinghua University,Beijing 100084,CHN);Life Test and Failure Mechanism Analyses for High -power LED[J];Semiconductor Optoelectronics;2005-02
4 LI Bing-qian(Dept.of Physics,Foshan University, Foshan 528000,CHN);Lumen Efficiency of 1 W-level High Power White LED[J];Semiconductor Optoelectronics;2005-04
5 ZHENG Xue-ren~1,LIU Wei-jian~1,LIN Xiao-wei~1,MA Zhi-ling~1,WANG Yao-hao~2,YU Bin-hai~2,LI Xu-feng~2 (1.Institute of Physics Science and Technol.,South China University of Technol.,Guangzhou 510641,CHN;2.Foshan Optoelectronic Technol.Co.,Ltd,Foshan 510200,CHN);Measurement and Analysis System of Thermal Property for Power LED Based on NI DAQ[J];Semiconductor Optoelectronics;2006-02
6 MA Xiao-jun(College of Automation Nanjing University of Technology,Nanjing 210009,China);Overview of the Technology of SSL Development in USA[J];Semiconductor Technology;2006-01
7 TENG Xiao-yun, LIU Cai-chi, HAO Qiu-yan, ZHAO Li-wei, ZHANG Wei (School of Material Science and Engineering, Hehei University of Technology, Tianjin 300130, China);Study of GaN-Based Semiconductor Material and Device Grown on Si Substrate[J];Semiconductor Technology;2006-02
8 AI Wei-wei, GUO Xia, LIU Bin, SONG Ying-ping, LIU Ying, SHEN Guang-di (Beijing Optoelectronic Technology Laboratory ,Beijing University of Technology, Beijing 100022,China);Research and Progress in Reliability of GaN-Based LED[J];Semiconductor Technology;2006-03
9 XU Yong-kuan ( The 46th Research Institute, CETC, Tianjin 300220, China);Development Status of Bulk GaN Single Crystal Growth Techniques[J];Semiconductor Technology;2007-02
10 Xu Yongkuan,Cheng Hongjuan,Yang Wei,Yu Xianglu,Lai Zhanping,Yan Ruyue(The 46th Research Institute,CETC,Tianjin 300220,China);Study on Surface Morphology of GaN Grown on Sapphire by HVPE[J];Semiconductor Technology;2008-11
【Secondary References】
China Proceedings of conference Full-text Database 1 Hits
1 Kang Yue-yao 1,2 , Jia Xue-dong 1 , Jiang Li-xing 1 , Dong Xiao-huan 3 , He Ting 1 1.PLA Information Engineering University, Zhengzhou, China 2.75719 Troops, Wuhan, China 3.61618 Troops, Beijin, China;A New Method Based on the LED Beacon Modulated by Pseudorandom Sequence for Flight Vehicle Landing[A];[C];2013
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