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《Materials Review》 2005-01
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Research Progress of GaN-based LED on Silicon

HONG Wei ZHU Liping YE Zhizhen TANG Haiping NI Xianfeng ZHAO Zhe (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027)  
GaN/Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost,high thermal conductivity,potential applications in the integration of the microelectronics and opto- electronics,mature technology in growth of Si single crystal with large diameter.However,the large thermal mis- match between GaN and Si leads to the formation of cracks in the epitaxial GaN films,which is a major problem in fabricating LEDs and other structure of electronic devices.Recently,the GaN quality has improved drastically with the development of technique.Some groups have succeeded in manufacturing LED on silicon.In this paper,the crack- ing problems of GaN film and research progress of GaN-based LED on Si are outlined.
【Fund】: 国家重点基础研究专项经费“973”资助(G20000683-06);; 教育部留学回国人员启动基金 教外司留[2003]406号;; 浙江省自然科学基金(M503183)
【CateGory Index】: TN312.8
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【Co-references】
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1 LIU Bao-lin (Department of Physics,Xiamen University,Xiamen 361005,CHN);GaN Polarity and Its Measurement and Application[J];Semiconductor Optoelectronics;2002-02
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3 ZHENG Dai-shun1, QIAN Ke-yuan1, LUO Yi(1,2) (1. Laboratory on Semiconductor Lighting,Graduate School at Shenzhen,Tsinghua University,Shenzhen 518055,CHN; 2. State Key Laboratory on Integrated Optoelectronics,College of Electr onic Engineering,Tsinghua University,Beijing 100084,CHN);Life Test and Failure Mechanism Analyses for High -power LED[J];Semiconductor Optoelectronics;2005-02
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