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《Materials Review》 2006-S1
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The Effect of Deposition Temperature and Postannealing on the Dielectric Properties of Ba_(0.5)Sr_(0.5)TiO_3 Thin Films

LOU Junhui~1, LIN Mingtong~ 1,2 , CHEN Guorong~1, YANG Yunxia~1, XIAO Tian~2, CHEN Chenxi~2(1 SVA Electron Co. Ltd., Shanghai 200081;2 School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237)  
700-nm-thick Ba_ 0.5 Sr_ 0.5 TiO_3 thin films for application in insulating layer of inorganic electroluminescent display are fabricated on ITO-coated Corning 1737 glass by rf magnetron sputter.The influence of substrate temperature and postannealing on the dielectric properties are investigated. With the increase of substrate temperature,the dielectric constant increases but the dielectric dissipation, the forward and reverse leakage current density all increase,while the breakdown strength decreases.The BST film deposited at 500℃ is postannealed at 550~700℃ and under an oxygen pressure of 1.8×10~ -2 Pa for 30 minutes. For the BST films annealed at 550 and 600℃, the dielectric dissipation is improved but the other dielectric parameters deteriorate;for the BST films annealed at 650 and 700℃, the dielectric constant enhances while the other dielectric properties degrade.
【CateGory Index】: TB383.2
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