Effects of Nano-SiC Doping on Microstructure and Superconductivity of MgB_2 Bulk Superconductors Synthesized by Microwave Heating Treatment
GUO Fangfang, LI Zhijie, LIN Cong, XU Zheng, PENG Hu2 (School of Material Science and Engineering, Tongji University, Shanghai 200092; Changsha SYNO-THERM Co., Ltd, Changsha 410013)
Nano-SiC doped MgB2 bulk samples MgB2-kSix/2Cx/2(x= 0.00,0.03,0.05,0.10) are prepared by microwave heating treatment The phase analysis and microstructure analysis show that, MgB crystal phase can be formed at 800℃in 20 minutes, the crystal lattice parameters a, c of MgB2 decrease gradually with increase of addition, and the value of a depresses more. The results of superconducting analysis indicated that the critical temperature Tc drops with the increase of addition and the properties of critical current density Jc (B) enhanced with increasing doping level when the temperature is lower than 20K. This result is more distinct at high magnetic field. The properties of Jc (B) dropped with the increasing doping level when the temperature is higher than 25K.This may be due to the areas of grain boundary increases because of the grain size reduces since nano-SiC doping.
【CateGory Index】： TM26