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《Materials Review》 2018-S1
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Study on the Property of Porous Si/SiO_2 Films Deposited by Thermal Evaporation

ZHAO Lite;FAN Donghua;DAI Fu;ZHU Huiqun;CHEN Yizhan;WANG Yi;LUO Renhua;School of Applied Physics and Materials,Wuyi University;  
In this paper,porous Si/SiO_2 films were prepared on Si substrates by thermal evaporation deposition.At 325 nm laser excitation,four photoluminescence emission peaks of the films are observed corresponding to 430 nm(2.88 eV),441 nm(2.81 eV),523 nm(2.47 eV),554 nm(2.24 eV)respectively.At 488 nm laser excitation,one photoluminescence emission peak of the films is observed corresponding to 570 nm(2.18 eV).According to the PL spectrum obtained,it is suggested that the energy levels of≡Si 0(silicon dangling bonds of donor state),≡Si-(silicon dangling bonds of acceptor state),SiOx(x2)and Si-O-Si defect states are2.81 eV,3.00 eV,5.05 eV and 0.63 eV respectively.Based on these results,the energy gap state(EGS)model of the porous amorphous Si/SiO_2 films is established and its luminescence mechanism is discussed.
【Fund】: 五邑大学青年基金(2015zk13);; 江门市基础与理论科学研究类科技计划项目([2016]189号);; 广东省高校创新团队资助项目(2015KCXTD027);; 广东省教育厅高校特色创新项目(2014KTSCX129);; 广东省教育厅2015年青年创新人才类项目(2015KQNCX170)
【CateGory Index】: TB383.2
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