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《Materials Review》 2018-S1
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Phase Field Simulation on the Morphology of InGaAs Heterostructure on GaAs Substrate

WANG Guan;WENG Yanhua;WU Pingping;Department of Materials Science and Engineering,Xiamen Institute of Technology;  
In this work,aphase field model is employed to simulate the surface morphology of In_(0.3)Ga_(0.7)As heterostructure grown on GaAs substrate.The Cahn-Hilliard equations with multi-order parameters can be simultaneously solved by semi implicit Fourier-spectral method to describe the surface morphology of the thin film/buffer layer structure.Simulation results show that,employing a 1—4 nm thick In_(0.15)Ga_(0.85)As buffer layer will enhance the critical wavelength from 34 nm to 80 nm.The surface roughness was found to vary from 2.87 nm to 0.43 nm for sinusoidal surface and from 1.21 nm to 0.18 nm for random superposition surface,when the buffer layer thickness increased from 1 nm to 10 nm.The thermodynamic analysis and strain distribution are employed to explain the surface evolution with the role played by buffer layer.The simulation results can be effective in improving the design of graded buffer layers,and can be compared to experimental works.
【Fund】: 福建省中青年教师教育科研项目科技类(JA14370);; 福建省高校杰出青年科研人才培育计划2016
【CateGory Index】: TB383.2;TM914.4
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