Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Northeastern University(Natural Science)》 2009-02
Add to Favorite Get Latest Update

Preparation of CuInSe_2 Thin Films by Tri-source Vacuum Co-evaporation and Their Properties

SHAN Yu-qiao,DANG Peng,SUN Shao-guang,SHAN Lian-zhong (Key Laboratory for Anisotropy & Texture of Materials,Ministry of Education,Northeastern University,Shenyang 110004,China.)  
The CuInSe2(CIS) thin films were prepared by tri-source vacuum co-evaporation with the pure Cu,In and Se powder as the evaporation sources.The effects of substrate temperature and annealing process on the surface morphology,structure and optical electrical properties of the films were investigated using scanning electron microscopy(SEM),X-ray diffraction(XRD),UV-visible spectroscopy and Hall probe.The results showed that the absorption indices of the thin films deposited on the substrates at different temperatures are all high in visible light band and all the films have a(112) preferred orientation.The energy gap is 0.99 eV when the substrate is at 200 ℃.The CuInSe2 films are of single chalcopyrite structure when the substrate temperature is either 200 ℃ or 300 ℃,and their resistance is 1.53 Ω/cm2 or 1.55 Ω/cm2 after annealing,respectively.
【Fund】: 国家自然科学基金资助项目(50571023)
【CateGory Index】: TB383.2
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 1 Hits
1 LI Li-bo;PEI Feng-wei;WANG Heng;YANG Xiu-chun;TIAN Hai-yan;Key Laboratory of Green Chemical Engineering and Technology of College of Heilongjiang Province, College of Chemical and Environmental Engineering, Harbin University of Science and Technology;;Preparation of absorption layer of CuIn(Ga)Se thin films solar cell[J];Chinese Journal of Power Sources;2014-03
Chinese Journal Full-text Database 10 Hits
1 HAN Ming-jun,ZHAO Yang,KE Dao-ming*(School of Electronics and Information Engineering,Anhui University,Hefei 230601,China);Research on characteristics of the overlap double gate MOSFET[J];Journal of Anhui University(Natural Science Edition);2012-02
2 YI Ping (Chongqing Optoelectronics Research Institute,Chongqing 400060,China);Mechanism of Inverse Current Leakage for CCD Output Diode[J];Semiconductor Optoelectronics;2001-06
3 WANG Lanxi,CHEN Xuekang,WANG Rui,CAO Shengzhu(National Key Lab.of Surface Engineering,Lanzhou Institute of Physics,Lanzhou 730000,CHN);Influence of Grain Boundary on Time Response of AlGaN UV Detectors[J];Semiconductor Optoelectronics;2010-01
4 CAO Qun,MU Weibing,YANG Hanfei,YANG Zhimei,GONG Min (Department of Microelectronics,School of Physical Science and Technology,Sichuan University,Chengdu 610065,CHN);Study on the Leakage Current at High Temperature and Infrared Reflectance Spectroscopy of 6H-SiC MOS Gate Oxide[J];Semiconductor Optoelectronics;2010-05
5 ZHANG Song1,2,XI Xi2,3,WANG Zhenjiao3,TANG Ning3,JI Jingjia3,4,LI Guohua1,4(1.School of Science;2.School of Internet of Things,Jiangnan University,Wuxi 214122,CHN; 3.Suntech Power Holding Co.,Ltd.,Wuxi 214018,CHN; 4.Jiangsu(Suntech) Institute for Photovoltaic Technology,Wuxi 214028,CHN);Investigation on SiO_2 Film Produced by Inline Oxidation[J];Semiconductor Optoelectronics;2012-02
6 NIU Shen-jun,WANG Jian-li,LAN Tian-ping (The 46th Research Institute, CETC, Tianjin 300220, China);Concentration Control of Silicon in VB-GaAs Method[J];Semiconductor Technology;2006-07
7 LI Ruo-fan1,2,WU Yi-bin2,YANG Rui-xia1,MA Yong-qiang1,2,3,SHANG Yao-hui2,NIU Chen-liang21.Hebei University of Technology,Tianjin 300130,China;2.The 13th Research Institute,CETC,Shijiazhuang050051,China;3.Hebei University of Engineering,Handan 056038,China);Accurate Measurement of Vertical Distribution of Carriers Concentration by Electrochemical Capacitance-Voltage[J];Semiconductor Technology;2007-09
8 ZHU Shao-bo,SUN Wei-feng,LI Hai-song,LU Sheng-li (National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China);Nonlinear Analysis on Drain Capacitance of 50 V LDMOS[J];Semiconductor Technology;2007-12
9 Zhao Yihao1,2,Chen Hongtai2,Chen Guoying1,Yang Hongwei2,Zhao Run2,Peng Haitao1,2(1.Dept.Info.& Engi.,Hebei University of Technology,Tianjin 300401,China;2.The 13th Research Institute,CETC,Shijiazhuang 050051,China);Numerical Study for High Efficiency 808 nm Laser Diode[J];Semiconductor Technology;2008-04
10 Liu Xinghui,Liu Tong(Shenyang Key Laboratory of Photoelectronic Devices and Detection Technology,College of Physics,Liaoning University,Shenyang 110036,China);Study on the Key Technology of 1N4626 Low-Noise Zener Diode[J];Semiconductor Technology;2009-05
China Proceedings of conference Full-text Database 9 Hits
1 Dong Zhi-fang (Institute of Electronic Engineering, CAEP, Mianyang 621900, China);Working Characteristic of Power MOSFET under Low Temperature[A];[C];2006
2 TU Cai-gen LIU Nuo ZHANG Xi (School of Microelectronics and Solid-state Electronics,University of Electronic Science and Technology of China,Chengdu Sichuan 610054);The Research of Electronic Structure of Nb-Doped BaTiO3[A];[C];2009
3 Dong Maojin [1 ][2], Chen Zhaoyang [1 ], Fan Yanwei [1 ], Cong Xiuyun [1 ] 1.Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011 2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China;Thermal-sensitive Characteristic of Multi-ply Impurities (Au、Ni)Doped n-type Silicon Materials[A];[C];2008
4 Lin Juan,Peizhi Yang (1 Advanced Technology and Manufacturing Key Lab on Renewable Energy Materials of the Ministry of Education of China,Yunnan Normal University,Kunming,Yunnan 650092) (2 Solar Energy Research Institute,Yunnan Normal University,Kunming,Yunnan 650092);The properties of silicon quantum dot on different substrates in tandem photovoltaic cell[A];[C];2011
5 He Xiaolei Lv Wenhua Li Jianying Yu Hejun(Atmospheric Observation Technology Center,CMA,Beijing,100081);Effective photo angle bias detector for passive solar tracking[A];[C];2007
6 He Xiaolei Lv Wenhua Li Jianying Yu Hejun ( Atmospheric Observation Technology Center, CMA, BeiJing ,10081 );An Effective Photoelectric Angle Bias Detector For Passive Solar Tracking[A];[C];2010
7 Li Li-Meng~(1,2),Han Bing~(1,2),Zhou Bing-Qing~(1,2**),Chen Xia~(1,2),Hao Li-yuan~(1,2) (1.Physics and Electronic Information College,Inner Mongolia Normal University, 2.Inner Mongolian Key Lab of Physics and Chemistry for Functional Material, Huhhot 010022,China);Simulation and Optimization of μc-Si(p)/c-Si(n) Heterojunction Solar Cells with AFORS-HET[A];[C];2008
8 Wang Lanxi~*,Chen Xuekang,Wang Yunfei,Guo Wantu,Wu Gan,Cao Shengzhu,Shang Kaiwen (National Key Lab.of Surface Engineering,Lanzhou Institute of Physics,Lanzhou 730000,China);Development of Ultraviolet Photodetector with Nano-Diamond Films[A];[C];2008
9 LI Xin WANG Shu-fen MAO Jing-xiang ZHAO Jin-yun (Kunming Institute of Physics,Kunming 650223,China);Dark current characteristics of HgCdTe photovoltaic detectors with annular aperture p-n junction[A];[C];2007
Chinese Journal Full-text Database 10 Hits
1 LIU Xin-fu , SUN Yi-cai , LIU Dong-sheng(Institute of Microelectronic Technology and Materials, Hebei University of Technology,Tianjin 300130,China);The principle and application of testing sheet resistance with four-point probe techniques[J];Semiconductor Technology;2004-07
2 Tang Huixiang 1,Yan Mi 1,Zhang Hui 1,Zhang Jiayou 2,Sun Yun 2,Xue Yuming 2 and Yang Deren 1(1 State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China) (2 Institute of Photoelectric Thin Films and Device,Nankai University,Tianjin 300071,China);Optimization of Fabrication Parameters of CuInSe_2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization[J];Chinese Journal of Semiconductors;2004-06
3 Rao Rui Xu Zhongyang(Department of electronic science and technology .Huazhong university of science and techiiolgy .Wuhan 430074);Progress in Research on Polycrystalline Silicon Film and Device[J];Materials Review;2000-07
4 ZHAO Ruqiang, LIANG Zongcun, LI Junyong, JIN Jinsheng, SHEN Hui(Key Laboratory of Solar Energy Department of Education of Guangdong Province,National Engineering Research Center for Renewable Energy Center of South China, Institute for Solar Energy Systems, Sun Yat-sen University,Guangzhou 510006);New Development of Manufacture Technology of Crystalline Silicon Solar Cells[J];Materials Review;2009-05
5 WU Sumei,XUE Yuzhi,ZHOU Limei(School of Materials Science and Engineering,Dalian Jiao Tong University,Dalian 116028);Preparation Processes of CuInSe_2 Photovoltaic Materials[J];Materials Review;2009-21
6 OU Tonggang,TAN Yanfang,WANG Jianxing,ZHOU Zhaofeng,PAN Yong(Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105;Key Laboratory of LowDimensional Materials and Application Technology of the Ministry of Education,Xiangtan University,Xiangtan 411105);Preparation of CuInSe_2 Thin Films by Selenization of Cu-In Alloys[J];Materials Review;2009-22
7 Yan Youhua, Liu Yingchun, Fang Ling, Lu Zhichao, Zhou Shaoxiong, Li Zhengbang (Advanced Technology & Materials Co.,Ltd., China Iron & Steel Research Institute Group, Beijing 100081, China);Effect of Sulfur Partial Pressure on Properties of CuInS_2 Absorber Films[J];Rare Metal Materials and Engineering;2009-05
8 Zhou Qigang1, Wang Weimin1, Long Fei2, Fu Zhengyi1, Wang Hao1, Wang Yucheng1, Zhang Jinyong1 (1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China) (2. Guilin University of Technology, Guilin 541004, China);Synthesis of CuIn_(0.7)Ga_(0.3)Se_2 (CIGS) Powder by SHS[J];Rare Metal Materials and Engineering;2009-08
9 SHI Min-min1,2, CHEN Hong-zheng1,2, WU Gang1,2, WANG Mang1,2 (1. Department of Polymer Science & Engineering, Zhejiang University, Hangzhou Zhejiang 310027, China; 2. State Key Lab of Silicon Materials, Hangzhou Zhejiang 310027, China);Opportunities,challenges and solutions of organic solar cells[J];Chinese Journal of Power Sources;2008-10
10 LI Wei1,2,LIU Xing-jiang1,ZHAO Yan-min1,YAN Li1,QIAO Zai-xiang1,SUN Yun3(1.National Key Laboratory of Power Sources,Tianjin Institute of Power Sources,Tianjin 300381,China; 2.School of Material Science and Engineering,Tianjin University,Tianjin 300071,China; 3.Institute of Photoelectronic Thin Film Device and Technology,Nankai University,Tianjin 300071,China);Stress in CIGS thin film solar cell[J];Chinese Journal of Power Sources;2011-04
China Proceedings of conference Full-text Database 1 Hits
1 ZHANG Yi-chen~1,SONG Qing-zhu~2,ZHANG Jun-hao~1 (1.Northeastern University,Shenyang110004,China; 2.ShenYang Vacuum Technology Institute,Shenyang 110042,China);TThe Design Method of The Uniformity of Thin Film Thickness by Magnetron Sputtering[A];[C];2009
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved