Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of University of Electronic Science and Technology of China》 1989-01
Add to Favorite Get Latest Update

DESIGN,FABRICATION AND MEASUREMENT OF MODULATION DOPED(Al, Ga)As/GaAs FIELD EFFECT TRANSISTOR

Zhn Qi (Dept.of Micro-electron.Technol.and Electron.Materials)  
The design, fabrication and measurement of modulation doped (Al, Ga)As/GaAs field effect transistor MODFET's are carried out. Utilizing the heterostructure material fabricated with the home-made molecular beam epitaxy system, both enhancement MODFET's and depletion MODFE T's are successfully obtained.The microwave characteristics of depletion MODFET's in the test show that the minimum noise firure is 2.49dB, and the maximum power gain 10.2dB at 4GHz.No announcement similar to the above stated results has yet been found in China.
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved