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《Journal of University of Electronic Science and Technology of China》 1989-02
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AN INVESTIGATION OF IONIC IMPLANTATION DOPED a-Si:H SCHOTTKY BARRIERS

Hui Henrong Ma Binren Qin Xuechao (Dept.of Microelectron.Technol.and Electron.Materials)  
In this paper, five kinds of a-Si:H Schottky barriers are fabricated by the glow discharge method and in the ionic implantation technology. The current voltage characteristics of these structures are also measured.According to the diffusion theory and thermionic emission theory, the barrier heights of the various samples are calculated respectively.It turns out that the current voltage relationship shows the〃 backward 〃 phenomenon when the impurity concentration in a-Si:H acheives a certain value. Moreover,the Schottk barrier heights can be reduced by increasing theyle impurity concentration in a-Si:H and implanting Zn+ ions into intrinsic, a-Si:H. It is predicted that the Schottky barrier heights can be largely decreased by doping metal elements to alloy a-Si:H.
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