Latest Technology PT IGBT vs. Power MOSFET
Jonthan Dodge, Tom Loder
This paper compares the switching and conduction loss performance of the latest generation of punch - through (PT) IGBT with power MOSFET. Also included is a brief overview of the PT IGBT structure. Benefits due to the unique striped, metal gate of Power MOS 7~(?) IGBT are enumerated, as well as some differences in characteristics between PT IGBT and power MOSFET. These IGBT provide a lower cost alternative to high voltage power MOSFET under many conditions, sometimes with superior performance, especially in bridge circuits.