GaAs and SiC Power Components for High End Power Supplies
Andreas Lindemann, Peter Friedrichs, Roland Rupp
Progress in semiconductor technology now permits to produce new power schottky diodes based on gallium arsenide (GaAs) or silicon carbide (SiC) material. This paper describes two particular aspects which are essential to understand operational behaviour of those devices: Their switching characteristics differ from silicon bipolar diodes', which should be taken into account when replacing conventional devices. The superior dynamic characteristics make the influence of parasitics on operational behaviour increase; thus packaging and the resulting secondary effects are considered. These reflections are referenced by a survey of exemplary GaAs and SiC Schottky diode components, complemented by an outlook on the ongoing technological development.