The Accomplishment of IGBT's Conception Is a Mileston of Power Electronics Technology Towards the High Power-High Frequencilization
Wang Zhengyuan (Beijing Power Electronics R and D Ceuter, Beijing 100088)
The paper "The Insulated Gate Transistor(IGT)——a New Power Switching Device", which was written by Dr. B. J. Baliga, who is an American Indian, and presented in 1983 is breifly introduced and reviewed. This is a classical paper, when IGBT(then it is called IGT) was in its infancy. The background of this paper are analyzed. In the 20 years since then, the forming and accomplishment of IGBT's conception plays an important motive part in the development of power electronics technology. It has opened the door of a new era of power electronics technology towards the high power-high frequencilization. Many application products are became more small-size and more lightweightbyit. It makes a remarkable contribution to the automatization, intellingentization efficient energy-saving and mechatronization in the related fields of national economy. The author of the paper is also briefly introduced.