The Insulated Gate Transistor (IGT)——A New Power Switching Device
By B. Jayant Baliga
The Insulated Gate Transistor (IGT) is described in this paper. It is a new power switching device that combines Power MOSFET and bipolar technology to provide the circuit designer with a device that has Power MOSFET input characteristics and bipolar output characteristics. Device ratings, characteristics and applications are discussed. Practical operating frequencies, voltage, and current 1 imits, as well as interface requirements with other devices are defined.