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The Insulated Gate Transistor (IGT)——A New Power Switching Device

By B. Jayant Baliga  
The Insulated Gate Transistor (IGT) is described in this paper. It is a new power switching device that combines Power MOSFET and bipolar technology to provide the circuit designer with a device that has Power MOSFET input characteristics and bipolar output characteristics. Device ratings, characteristics and applications are discussed. Practical operating frequencies, voltage, and current 1 imits, as well as interface requirements with other devices are defined.
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