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Research of Power Consumption for Trench MOSFET and e-JFET

This paper analyses the power consumption of power devices that are applied in the field of low voltage operation and high frequency in theory, calculating two typical structures, trench MOSFET and enhanced-Junction Field Effect Transistor (e- JFET). It is verified through simulation that the e-JFET device has lower switch power consumption (24% reduced) and total consumption (30% reduced) compared with trench MOSFET structure.
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