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《Power Electronics》 2002-01
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Design and Modeling of Merged PiN/Schottky Diode(MPS) Based on SiC and Si

ZHANG Yu ming, NIU Xin jun, ZHANG Yi men (Microelectronic Institute of Xidian University, Xi'an 710071, China)  
Merged PiN/Schottky Diode(MPS) has been introduced in this paper, which is a new device that keeps the forward characteristics of a schottky diode and the reverse property of a PN diode. MPS with high switching speed, high breakdown voltage, low reverse leakage current and low forward voltage drop is the best choice for power system. The forward conduction, reverse blocking and breakdown voltage of MPS have been theorized by analytical model. The main device design parameters considerated mainly for 4H SiC, such as the epilayer doping and thickness, Schottky contact and pn junction grid width, and pn junction depth and doping concentration, have been designed and optimized.
【CateGory Index】: TN31
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【References】
Chinese Journal Full-text Database 3 Hits
1 ZHANG Hai-peng1,2,3,QI Rui-sheng1,WANG De-jun2,WANG Yong3(1.Hangzhou Dianzi University,Hangzhou 310018,China);Device Structure and Simulations of 4H-SiC TPJBS Diode[J];电力电子技术;2011-09
2 NIU Xinjun ZHANG Yuming ZHANG Yimen LU Hongliang CHANG Yuancheng (Microelectronics Institute, Xidian University, Xi′an, 710071, CHN);Analysis of Power Dissipation Characteristics of MPS Based on SiC[J];固体电子学研究与进展;2003-02
3 Niu Xinjun,Zhang Yuming,Zhang Yimen and Lü Hongliang(Microelectronics Institute,Xidian University,Xi'an710071,China);Two-Dimensional Simulation of SiC Merged PiN/Sc hottky Diodes[J];半导体学报;2002-05
【Co-references】
Chinese Journal Full-text Database 5 Hits
1 ZHANG Bo,DENG Xiao-chuan,CHEN Wan-jun,and LI Zhao-ji (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China Chengdu 610054);Wide Bandgap Semiconductors for Power Electronics[J];电子科技大学学报;2009-05
2 ZHANG Bo,DENG Xiao-chuan,ZHANG You-run,LI Zhao-ji(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China);Recent Development and Future Perspective of Silicon Carbide Power Devices——Opportunity and Challenge[J];中国电子科学研究院学报;2009-02
3 ZHANG Yu ming, NIU Xin jun, ZHANG Yi men (Microelectronic Institute of Xidian University, Xi'an 710071, China);Design and Modeling of Merged PiN/Schottky Diode(MPS) Based on SiC and Si[J];电力电子技术;2002-01
4 Zhang Yuming\ Zhang Yimen(Microelectronics Institute of Xidian University, Xi′an\ 710071) Luo Jinsheng(Xi′an Jiaotong University, Xi′an \ 710049)Received 2 May 1998, revised manuscript received 7 July 1998;Pt Schottky Barrier Diodes on n-type 6H-Silicon Carbide[J];半导体学报;1999-11
5 Zhang Yuming; Zhang Yimen(Microelectronics Inst. of XIDIAN Univ., Xi'an, 710071,CHN)Luo Jingsheng(Xi' an Jiaotong Univ., 710049,CHN);Comparison of High-temperature Characteristics of SiC,GaAs and Si[J];固体电子学研究与进展;1997-03
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 WEI Wensheng,DAI Yuxing,ZHANG Zhengjiang,LI Jing (College of Physics & Electronic Information Engineering,Wenzhou University,Wenzhou 325035);Investigations and Applications of PIN Type Fast Recovery Diodes[J];材料导报;2012-19
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