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《Power Electronics》 2002-01
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Analysis of Novel SiGe Switching Power Diode Characters

CHEN Bo tao, GAO Yong, YANG Yuan (Xi'an University of Technology, Xi'an 710048)  
In this paper a novel structure of SiGe power switching diodes is presented. On the basis of analyzing the structure mechanism, we simulated the device characteristics using Medici and carried out the optimal design. The simulation results indicate that the new structure of SiGe/Si power switching diode has lower forward voltage drop, lower stored charge and better performance than the counterpart of Si.
【Fund】: 陕西省自然科学基金重点资助项目
【CateGory Index】: TN312
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 Zhang Wanrong,Li Zhiguo,Guo Weiling,Sun YinghuaMu Fuchen,Cheng Yaohai,Shen Guangdi(Department of Electronic Engineering,Beijing Polytechnic University,Beijing100022)Luo Jinsheng(Institute of Microelectronics,Xi′an Jiaotong University,Xi′an7100;Physical Parameter Models for Si1-xGex Strained Layer Material and Si/Si1-xGex Device[J];SEMICONDUCTOR TECHNOLOGY;1998-03
【Co-citations】
Chinese Journal Full-text Database 5 Hits
1 Gao Yong,Chen Botao and Yang Yuan(Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China);Analysis and Optimal Design of Novel SiGe/Si Heterojunction Switching Power Diodes[J];Chinese Journal of Semiconductors;2002-07
2 QI Hui, GAO Yong, YU Ning -mei, MA Li, AN Tao (Xi'an University of Technology, Xi'an 710048, China);Characteristics simulation and analysis of SiGe/Si hetero -junction switching power diode with gradual changing doped N ~ - region[J];Journal of Functional Materials and Devices;2003-04
3 QI Hui GAO Yong YU Ningmei MA Li An Tao (Xi′an University of Technology,Xi′an,710048,CHN);Characteristics Simulation of Two Kinds of SiGe/Si Power Diode with Novel Structure[J];Research & Progress of Solid State Electronics;2004-02
4 ZHAO Chuanzhen TANG Jiyu WEN Yuhua WU Liangzhen KONG Yunting (Colledge of Physics and Telecommunication,South China Normal University,Guangzhou,510006,CHN);The Calcalation of the Intrinsic Carrier Concentration of Strained Si_(1-x)Ge_x Layers[J];Research & Progress of SSE Solid State Electronics;2007-04
5 CHEN Bo tao, YANG Yuan, GAO Yong (Xi'an University of Technology,Xi'an 710048,China);The Optimal Design and Dynamic Characteristics Simulation of SiGe Switching Power Diodes[J];Journal of Xi'an University of Technology;2002-02
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