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《Power Electronics》 2006-01
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Cryogenic Study and Modeling of IGBTs

ZHANG Yu-lin,HU Gao-hong,QIU Ming,QI Zhi-ping(Chinese Academic of Sciences,Beijing 100080,China)  
Detailed experimental data taken from Non-Punch Through(NPT) IGBTs between 300 to 77 K are presented.The forward voltage drop,the gain of the inherent PNP transistor and turn-off time were found to decrease whereas the threshold voltage and transconductance were found to increase with the decrease in operating temperature.A physics based model previously developed is modified to incorporate appropriate physical behavior at low junction temperature.The results from model are compared to the experimental data.
【CateGory Index】: TN322.8
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