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《Power Electronics》 1996-02
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Low Temperature Characteristics of Power Semiconductor Devices Osaka University Yoshishige Murakami Toshifumi Ise Atsushi Ishigami

Characteristics of various power semiconductor devices,such as MOSFETs,IGBTs,SCRs and power diodes are discussed in this paper based on experimental and 2 dimensional device simulation results for temperature higher than liquid nitrogen(77K).
【CateGory Index】: TP212
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