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《POWER ELECTRONICS》 1996-02
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Analysis and Experiment of MOS Power Device Termination

Using two dimensional finite element numerical analysis,we develop a computer simulation program used for terminal field calculation of reverse biased pn junctions.It can simulate reverse characteristics of MOS power device related to field limiting rings,field plates,SiO 2 medium and surface charge.Physical model and method used in this model are introduced,and some simulation example and experiment result are given in this paper.
【CateGory Index】: TN306
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