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The impacts of ultra-thin buried-oxide on short-channel effects of FDSOI devices

Tan Sihao;Li Yudong;Xu Yefeng;Yan Jiang;Institute of Microelectronics,Chinese Academy of Sciences;Key Laboratory of Microelectronics Devices and Integrated Technology;  
The increasing short channel effect is posing greater challenge to all aspects of semiconductor industry for 22nm technology node and beyond.Fully depleted silicon on insulator(FDSOI)is a promising new technology for 22nm node and beyond and has demonstrated several advantages including outstanding short-channel effect control.We used simulating software TCAD to study the impacts of different thickness of buried-oxide layer on performance of FDSOI devices.We studied the impacts of thinned BOX layer and applying back-gate bias(V_(bg) )on short-channel effects(SCE)of FDSOI devices and explained the mechanism of the phenomenon.Simulation results suggest that FDSOI devices with Ultrathin BOX(UTB)structure demonstrates a much lower I_(off) and better DIBL performance comparing to thick BOX FDSOI devices.V_(bg) on UTB FDSOI devices modulates the threshold voltage of the FDSOI devices sensitively.Under appropriate V_(bg) ,the SS and DIBL performance of the FDSOI devices improve,indicating better SCE control.Experimental results verified the conclusions made by simulation results.25nm-BOX FDSOI devices demonstrate a 50%smaller I_(off) than 145nm-BOX FDSOI devices and a much better DIBL performance.
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