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《ELECTRONIC COMPONENTS $ MATERIALS》 2000-01
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Polycrystalline silicon thin film fabricated with novel laser crystallization

ZENG Xiang bin, XU Zhong yang, DAI Yong bing , WANG Chang an, ZHOU Xue mei, ZHAO Bo fang (Department of Electronics Science and Technology, Huazhong University of Science and Technology, Wuhan Hubei 430074)  
In Chinese Polycrystalline silicon thin film is fabricated with a novel technique-two step laser crystallization The grain size of the film is 1 1 μm, better than that of the film fabricated with conventional single step laser crystallization The new approach is effective for enlarging grain size and improving the performances the transistor of the new film (4 refs )
【CateGory Index】: TN304.055
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【Co-references】
Chinese Journal Full-text Database 10 Hits
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