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《Electronic Components $ Materials》 2005-01
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Study on Gas Sensing Property of SnO_2 Thin Film Prepared by Magnetic Reactive Sputtering

LI Chao-lin (Department of Electron and Information Engineering, Huaian Institute of Information Vocation Technology, Huai’an 223001, China)  
Studied were the gas sensing properties of SnO2 thin film prepared by magnetic reactive sputtering. The sensing mechanism for gas sensor of SnO2 thin film was also discussed. Measuring results (resistance and sensitivity) indicate that of SnO2 thin film, suitable thickness is 150~400 nm, optimal thickness 250 nm. The sensitivity of SnO2 thin film sensor and the selectivity about H2, CO and C2H5OH will increase by doping microamount impurities such as Pd, Pt and Ag. The response time is also reduced less than 0.5 s.
【CateGory Index】: TB383
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