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《Electronic Components and Materials》 2010-01
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Effects of S doping on the thermoelectric properties of ZnO

ZUO Lianyong,SHEN Honglie,ZHU Yunguang(College of Materials Science & Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China)  
ZnO1-xSx(0≤x≤0.05) bulk samples were fabricated by the solid state reaction method.The effects of S doping on the crystalline structure and thermoelectric properties of ZnO were investigated through measuring the X-ray diffraction(XRD) spectra,electrical conductivity and Seebeck coefficient(thermoelectric power,S) of obtained ZnO samples.The results show that all samples adopt the hexagonal wurtzite structure.At 573 K,the electrical conductivities of ZnO1-xSx(0x≤0.05)(1 723 S.m–1) are much higher than that of neat ZnO(3.02 S.m–1),while the difference in Seebeck coefficient amongst all samples is small.At 1073K,the power factor of ZnO0.97S0.03 with a value of 2.5×10–4 Wm–1K–2 is largest among all samples and is 10 times as large as that of ZnO.
【Fund】: 江苏省科技支撑计划资助项目(No.BE2008020)
【CateGory Index】: TN304.2
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