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《Electronic Components and Materials》 2018-05
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Preparation of monocrystalline black silicon structure and its absorption property

REN Gege;DING Hongqi;College of Materials Science and Engineering, Liaoning University of Engineering and Technology;  
The black silicon structure has excellent trapping performance, which can effectively reduce the loss of light on the surface of the solar cell. It is the key research project of the current photovoltaic industry. In this article, Ag/Cu diatom two step metal assisted chemical etching(MACE) method was adopt to prepare the high efficient single crystal black silicon trapping structure by adjusting the molar ratio of Ag/Cu, the etching temperature, etching time and the concentration of H_2 O_2. The formation mechanism of black silicon structure and its influence on the reflectivity of silicon wafer surface was systematicly studied. The surface morphology of the samples was observed by field emission scanning electron microscopy and the diffuse reflectance spectra of the samples were measured by spectrophotometer. The results show that uniform and dense nano column structures are prepared when the molar ratio of Ag/Cu is 1/10, the etching temperature is 60 ℃, the etching time is 30 s and the concentration of H_2 O_2 is 0.6 mol/L. The etching depth is about 2.09 μm, etching aperture is 55-80 nm, and the average reflectivity of the surface is only 1.45%(200-1100 nm). It not only reduces the amount of Ag NO_3, saves the cost of production, but also achieves the structure of black silicon with excellent trapping performance.
【CateGory Index】: TN304.12
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