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《Electronic Components and Materials》 2018-05
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Preparation and electrochemical properties of sulfur-doped three-dimensional graphene

LI Xin;ZHANG Haiyang;ZHU Ruzhi;YANG Wenyao;YANG Yajie;Chongqing Engineering Research Center of New Energy Storage Devices and Applications, Chongqing University of Arts and Sciences;College of Opto-electronic Information, University of Electronic Science and Technology of China;  
In this paper, with graphene oxide prepared by the Hummer method as a precursor and sulfur as a doping element, a sulfur-doped three-dimensional graphene electrode material(CS material) was prepared by adopting a hydrothermal method. By means of SEM, BET and other characterization methods, the microtopography and aperture distribution of the material were analyzed; and a focused research was performed on the electrochemical properties of the CS material prepared under different dopant proportions. The result shows that the specific surface area of the CS material is 378.45 m~2/g, and the apertures are mainly distributed in 2-5 nm. When the mass ratio of sulfur to carbon is 0.25:1, the electrochemical properties of the CS material are optimal. The equivalent series resistance thereof is merely 2.54 omega, and the specific capacity is up to 134.7 F/g(0.1 A/g), which can reach to 89 F/g even if the current density doubles for 10 times(1 A/g). With the advantages of low cost and safety, the prepared sulfar-doped three-dimensional graphene has a good application prospect.
【Fund】: 重庆市博士后科研项目特别资助(Xm2017051);; 重庆市教育委员会科学技术研究项目(KJ1601111);; 永川区自然科学基金计划项目(Ycstc 2016nc2001);; 国家级大学生创新创业训练计划项目(201610642065);; 重庆市大学生创新创业项目(2017106420174);; 重庆市高校新型储能器件及应用工程研究中心开放课题(KF20170202);; 重庆文理学院校级科研项目(R2016DQ11 P2016DQ14 XSKY2017079)
【CateGory Index】: TM53
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