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《Electronic Components and Materials》 2018-05
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Removal of colloidal silica abrasive in post CMP cleaning using FA/O alkaline cleaning solutions

YANG Liu;LIU Yuling;TAN Baimei;GAO Baohong;LIU Yilin;School of Electronic Information Engineering, Hebei University of Technology;Tianjin Key Laboratory of Electronic Materials and Devices;  
With the integration of integrated circuits improving continuously,the cleaning after chemical planarization(CMP)is particularly important in semiconductor technology.This paper introduces a kind of novel FA/O alkaline cleaning solutions.Its main ingredients include FA/OII chelating agent and O-20 non-ionic surfactant.FA/OII chelating agent is a kind of organic amine alkali.It not only adjusts the p H value,but also reacts with the Cu O and Cu(OH)_x and generates stable complex compound.At the same time,the Si O_2 adsorbed chemically will be divorced from the surface with the Cu O and Cu(OH)_x.The surface tension of O-20 non-ionic surfactant is low and easy to spread on the surface.The particles adsorbed physically will be held up and taken away by cleaning solutions.Through a series of contrast experiments,when the volume fraction of FA/OII chelating agent is 0.015%,and the volume fraction of surfactant is 0.25%,the number of particles on the surface of the wafer is reduced from 3200 to 611,and the surface roughness is 1.06 nm,there is no corrosion phenomena.
【Fund】: 国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003—004-007);; 国家自然科学基金资助项目(NSFC61504037);; 河北省博士后择优资助项目(B2015003010)
【CateGory Index】: TN305
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