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Design of on Ultra-low Noise K-band Amplifier

CHU Ran,YANG Qingfeng,SHEN Minglei (School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology,Nanjing 210094,China)  
This paper discusses the complete design flow of a K-band ultra-low noise amplifier with microwave simulation software ADS2006,including the circuit design,layout design and simulation process etc.This K-band low noise amplifier(LNA) consists of three-stage topological structure based on the HEMT application.A novel feedback configuration is proposed to improve the performance of the gain curve flatness.In 19.5 GHz~21.5 GHz band,this K-band LNA has good electrical performance,while the maximum noise figure of the K-band LNA was less than 1.5dB and the minimum gain higher than 30dB.
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