Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Electron Devices》 2004-01
Add to Favorite Get Latest Update

A Study of Structure and Component Distribution of Thin Film Ga_2O_3 Prepared by Thermal Evaporation

WANGZhen, HUANG Hui-feng, ZHANG Hao-kang (Departwent of Electronic Engineering, Nanjing 210096, China)  
The Ga2O3 films were prepared by the thermal evaporation technique, and heat-treated in the atmosphere at 500℃ and 800℃. The component and structure of gallium oxide films were analyzed by Auger electron spectroscopy (AES) and Xrray Diffraction (XRD) , respectively. The results show that the Ga2O3 films prepared by the thermal evaporation technique are amorphous,. and the component distribution of the films is not homogeneous along the depth. The monoclinic system was observed in amorphous thin films after 500℃ heat - treated in the atmosphere, and the component uniformity of the films was improved. After 800℃ heat-treated,β-GaO3 thin films with homogeneous component were gained. With the difference of heat-treated temperature, the crystal orientation changes, too.
【Fund】: 江苏省自然科学基金(BK2001012)
【CateGory Index】: TN304.055
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 1 Hits
1 WANG Xin,XIANG Rong,TIAN Jingquan,JIANG Delong,LI Ye,WANG Guozheng,DUANMU Qingduo(School of Science,Changchun University of Science and Technology,Changchun 130022);Influence of Annealing on the properties of Gallium Oxide Thin film[J];Journal of Changchun University of Science and Technology(Natural Science Edition);2008-04
Chinese Journal Full-text Database 5 Hits
1 ZHANG Xiu-tai,HUANG Hui-fen(Department of Electronic Engineering South East University, Nanjing 210096, China);Microstructure and Spectral Properties of Ga_2O_3∶Mn Electroluminescent phosphor Thin Films[J];Journal of Electron Devices;2004-04
2 DAI Jiang-nan,WANG Li,FANG Wen-qing,PU Yong,LI Fan,ZHENG Chang-da,LIU Wei-hua,JIANG Feng-yi(Education Ministry Engineering Research Center for Luminescence Material and Device,Nanchang University,Nanchang 330047,China);Ga_2O_3 Thin Films Grown on Sapphire by Atmospheric Pressure MOCVD[J];Chinese Journal of Luminescence;2006-03
3 YI Li xin, LI Yun bai, HOU Yan bing, DONG Jin feng, WANG Yong sheng, XU Xu rong (Institute of Optoelectronic Technology, Northern Jiaotong University,Beijing 100044,China);Research development on inorganic thin film electroluminescence display[J];Journal of Functional Materials;2001-04
4 DENG Chao yong,WANG Yong sheng,YANG Sheng (Institute of Optoelectronic Technology, Northern Jiaotong University, Laboratory of Materials for Information Storage and Display, Beijing 100044,China);Research on inorganic thin film electroluminescence[J];Journal of Functional Materials;2002-02
5 Zhao Lijuan\ Zhang Guangyin (Photonic Research Center,Physics College,Nankai University,Tianjin\ 300071) Zhong Guozhu (Laboratory of Excited State Processes,The Chinese Academy of Sciences,Changchun\ 130021);THIN FILM ELECTROLUMINESCENCE OF INORGANIC MATERIALS[J];PHYSICS;1999-07
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 LIU Jian-jun,YAN Jin-liang,SHI Liang,LI Ai-li(School of Physics,Ludong University,Yantai 264025,China);Studies on Deep Ultraviolet Transparent Conductive Ga_2O_2/ITO/Ga_2O_3 Films[J];Ludong University Journal(Natural Science Edition);2009-04
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved