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《Journal of Electron Devices》 2004-01
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The Research of Fully-Depleted Thin-Film SOI CMOS Devices and Circuits with N + Poly Gate

LIAN Jun , HAI Chao-he , HAN Zheng-sheng, ZHAO Hong-chen, YANG Rong (Institute of Microelectronics of Chinese Academy of Sciences , Beijing 100029, China )  
Using SIMOX substrate, fully-depleted thin-film SOI. CMOS devices and circuits are investigated. The process of thin-film fully-depleted SOI CMOS devices and circuits with N + Poly Gate are successfully developed. The performance of devices and circuits are excellent. The drive current of nMOS or pMOS is strong, and their leakage current very weak. The propagation delay of every stage of in this 101 stage ring oscillator is only 50.5 ps with 3V supply.
【CateGory Index】: TN432
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【Co-references】
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