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《Chinese Journal of Electron Devices》 2013-01
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Design of X-Band Low Noise Amplifier

MA Wanxiong,CHEN Changming*,ZHANG Chuan(Chengdu University of Information Technology,Chengdu 610225,China)  
It was difficult to choose circuit topology of X-band low noise amplifier,so an amplifier was designed and simulated.This amplifier,using NEC ' s NE3210S01,had a micro-strip impedance converting matching structure and a three-stage cascade topology.The ADS software was used as a tool to design,optimize and simulate.The designed amplifier exhibited broadband operation from 9.2 GHz~9.6 GHz with noise figure less than 1.7 dB,band gain 33.5 dB,band gain flatness less than 0.3 dB and VSWR less than 1.5.The amplifier has been applied to the X-band receiver with good results.The method of design can be refered for engineering.
【CateGory Index】: TN722.3
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【Citations】
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