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Mass Spectrographic Analysis of InP Material and its Hall Coefficient Measure

Xu Jiancheng (Dep.of Physics, Capital Normal University) Chen Yaning (Beijing Xicheng Adult College) Chen Dingqin (Institute of Semiconductors, Academia Sinica)  
In this paper, the physical properties of Indium phos-phide material are discussed. The mass spectrographic analysis results for crystal face (100) and (111) in the InP are given and Hall coefficient of the InP for face (100) is measured. And specifically the photoluminescence properties of Indium phosphide for crystal face (100) are investigated. Experimental results indicate that the contamination of silicon is predominant.
【CateGory Index】: TN304.23
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