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《ACTA ELECTRONICA SINICA》 1998-01
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E_n-l_n Noise Performance Analysis for the Cascade Circuits

Wang Jun(Institue of Electronic Engineering,Chian Academy of Engineering and Physics,Chengdu 610003)Dai Yisong (Dept.of Electronic Engineering,Jilin University of Technology,Canchun 130025)  
Based on the En-In noise model of cascade circuits, not only the limitation of Friis theorem is analysed,but also the En-ln noise mathematical model for the cascade cireuits is developed. This model with simple formulas and easy parameter's extraction will facilitate the implementation of the model into the simulation programs for the circuit noise. The analsis also focuses on the minimum noise conditions for the cascade precucuits. Because the correlativity between the En and In is considered, the pnyision of noise calculation for the cascade circuits can be guaranteed effectively.
【CateGory Index】: TN911.4
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【References】
Chinese Journal Full-text Database 1 Hits
1 Zhou Kaibo1 Li Dan1 Tang Tianzhi2 Li Mengchun2(1 Department of Control Science and Engineering;Huazhong University of Science and Technology,Wuhan 430074,China;2 Technology Center,China Petroleum Loggin Co.Ltd.,Xi′an 710021,China);Low-noise analysis of a preamplifier for NMR logging tools[J];Journal of Huazhong University of Science and Technology(Nature Science Edition);2008-01
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Wang Jun(Institute of Electronic Engineering, China Academy of Engineering and Physics, Chengdu 610003)Dai Yisong(Dept. of Electronic Engineering, Jilin University of Technology, Changchun 130025);On the Noise Calculation of Bias Circuit of Transistor Amplifier[J];ACTA ELECTRONICA SINICA;1998-05
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4 LIU Zhang-wen~(1,2),JIANG Yi~1,GU Tian-xiang~1(1.Institute of Automatic Engineering,University of Electronic Science and Technology of China,Chengdu,Sichuan 610054,China;2.Institute of Applied Electronics,CAEP,Mianyang,Sichuan 621900,China);A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices[J];Acta Electronica Sinica;2006-02
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8 Liu Hai\|Wen 1)2) Sun Xiao\|Wei 1) Cheng Zhi\|Qun 1) Che Yan Feng 1) Li Zheng\|Fan 2) 1) (Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai\ 200050,China) 2) (Department of Electronic Engineering,Shanghai Jiaotong University,Shanghai\ 200030,China);A novel,yet direct,parameter-extraction method for heterojuction bipolar transistors small-signal model[J];Acta Physica Sinica;2003-09
9 SHEN Hai-bin, LI Xiao-ming, YU Jun, PEN Xue-zeng, YAN Xiao-lang (Zhejiang University, Hangzhou 310027, China);The Noise Model and Fast Simulation of A Random Number Generator[J];Acta Simulata Systematica Sinica;2004-04
10 Liu Zhangwen ~(1,2) Jiang Yi ~(1) Gu Tianxiang ~(1)~1(Institute of Automatic Engineering,University of Electronic Science andTechnology of China,Chengdu 610054,Chian)~2(Institute of Applied Electronics,CAEP,MianYang 621900,Chian);Determining the small-signal model circuit for GaAs FET/pHEMT[J];Chinese Journal of Scientific Instrument;2006-07
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