Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《ACTA ELECTRONICA SINICA》 2000-02
Add to Favorite Get Latest Update

Analysis and Characteristic of High Gain Ultra Fast GaAs Photoconductive Switches

SHI Wei 1,LIANG Zhen xian 2(Xi′an University of Technology,Xi′an 710048,China;2 Xi′an Jiaotong University,Xi′an 710049,China)  
A model of luminous charge domain to analyze the characteristic of photoconductive switches has been first proposed.The switching procedure of high gain photoconductive switches can be described with an optically activated luminous charge domain.The formation,radiation transit and accumulations of the charge domain are related with the triggering and sustaining phase of photoconductive switches,respectively.
【Fund】: 国家自然科学基金!(No .5940 70 0 6);; 陕西省教委专项科学基金!(No .99JK1 98)
【CateGory Index】: TN201
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 7 Hits
1 WU Ming-he1,2,ZHENG Xiao-ming2,SUN Yun-qing1,CUI Hai-juan1,and ZENG Gang1(1.School of Physical Electronics,University of Electronic Science and Technology of China Chengdu 610054; 2.School of Dentistry and Health Sciences,Charles Sturt University,NSW 2678 Australia);Impact of Storage Capacitor on the Modes of PCSS[J];Journal of University of Electronic Science and Technology of China;2011-02
2 SHI Wei~1,JI Wei-li~1,ZHAO Wei~2 (1.Applied Physics Department,Xi'an University of Technology,Xi'an,Shaanxi 710048,China; 2.State Key Laboratory of Transient Optics Technology,Xi'an Institute of Optics and Precision Mechanics, The Chinese Academy of Sciences,Xi'an,Shaanxi 710068,China);Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches[J];Acta Electronica Sinica;2004-11
3 JIA Wan-li,SHI Wei,JI Wei-li,LI Meng-xia(Department of Physics,Xi'an University of Technology,Xi'an,Shaanxi 710054,China);Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches[J];Acta Electronica Sinica;2008-09
4 Shi Wei 1) Ma De_Ming 1) Zhao Wei 2) 1) (Department of Applied Physics, Xi’an University of Technology, Xi’an 710048, China) 2) (State Key Laboratory of Transient Optics Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an\ 710068,China);Generation of steady and jitter-free ultra-fast electrical pulses with GaAs potoconductive switches[J];Acta Physica Sinica;2004-06
5 SHI Wei, CHEN Er zhu, ZHANG Xian bin (Xi’an University of Technology,Xi’an 710048,China);Monopole Charge Domain in High Gain GaAs Photoconductive Switch[J];Journal of Xi'an University of Technology;2001-02
6 XUE Hong1,2,SHI Wei1,JI Weili1,HAN Xiaowei1,2(1.Faculty of Science,Xi’an University of Technology,Xi’an 710054,China;2.Department of Physics,Weinan Teachers University,Weinan 714000,China);Lock-on Mechanism in Nonlinear Mode of Photoconductive Switches[J];Journal of Xi'an University of Technology;2011-04
7 LI Yin-xin,SU Wei(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang Sichuan 621900,China);Problems and Development Trends of Photoconductive Semiconductor Switches[J];Information and Electronic Engineering;2009-01
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 HUANG Yunian(Beijing Institute of Applied Physics and Computational Mathematics, Beijin 100088, CHN);High power microwave generation using photoconductive semiconductor switches[J];SEMICONDUCTOR OPTOELECTRONICS;1998-02
2 HUANG Yu-nian(Beijing Institute of Applied Physics and Computational Mathematics, Beijing 100 088,China);Pulsed Power System Using Photoconductive Semiconductor Switches[J];SEMICONDUCTOR OPTOELECTRONICS;2000-05
3 JIANG Jianping CHEN Hanxiang (Qinghua University,Beijing 100084,CHN);Data acquisition rechnique for IR laser double beam nondestructive testing[J];SEMICONDUCTOR OPTOELECTRONICS;1997-02
4 GONG Ren-xi, ZHANG Yi-men, SHI Shun-xiang, ZHANG Yu-ming, ZHANG Tong-yi (Institute of Microelectronics, Xidian University, Xi' an 710071, China);Photoconductive switches and their two operational modes[J];Semiconductor Technology;2001-09
5 XIE Zi-li(Nanjing Electronic Device Institute,Nanjing 210016,China);Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs[J];Semiconductor Technology;2002-07
6 HOU Jun-yan1,DAI Hui-ying1,2 , SHI Wei2,DONG Qiu-Xia1 ( 1. Science Institute, Air Force Engineering University, Xi' an 710051, China; 2. Department of Applied Physics, Xi' an University of Technology, Xi' an 710048, China);Compare of Scattering Mechanisms in SI GaAs Photoconductive Switch[J];Semiconductor Technology;2006-12
7 YANG Hong,WANG He,CHEN Guang de (Institute of Solar Energy,Xian Jiaotong University.Xian 710049,China) YU Hua cong,XI Jian ping (Institute of Nanometer,Shanghai Jiaotong University,Shanghai 200030,China);SiN_x∶H passivation of polycrystalline silicon solar cell[J];Semiconductor Information;2001-06
8 WANG Lu1,LIU Qing-gang1,LI Suo-yin2,WEI Ze-feng3,LI Min1,LI Da-chao1,HU Xiao-tang11.State Key Laboratory of Precision Measuring Technology and Instruments,Tianjin University,Tianjin 300072,China;2.The 13th Research Institute,CETC,Shijiazhuang 050051,China;3.The Artillary Academy of PLA,Hefei 230031,China;New Progress and Applications of Ultra High Speed Electro-Optic Sampling Technique[J];Micronanoelectronic Technology;2006-04
9 Sun Niefeng,Chen Xudong,Zhao Youwen, Yang Guangyao,Liu Silin,Sun Tongnian (Hebei Semiconductor Research Institute,Shijiazhuang 050051);Investigation on progress of InP Crystal in Application[J];SEMICONDUCTOR INFORMATION;1998-04
10 SHI Wei1, ZHAO Wei2, SUN Xiao\|wei3 and Lam Yee Loy\+3(1\ Applied Physics Department, Xi'an University of Technology, Xi'an\ 710048, China) (2\ State Key Laboratory of Transient Optics and Technology, Xi'an\ 710068, China) (3\ Division of Microelectroni;Transit Properties of High Power Ultra\|Fast Photoconductive Semiconductor Switch[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-05
【Secondary References】
Chinese Journal Full-text Database 10 Hits
1 ZHUANG Ling1,WANG Dong2,TANG Xian-lun1,ZHANG Jin-rong3(1.College of Communications and Information Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,CHN;2.College of Computer Science and Engineering,Chongqing Institute of Technology,Chongqing 400050,CHN;3.College of Automation,Chongqing University,Chongqing 400065,CHN);Design of UWB Pulse Communications Using Delta Operator Theory[J];Semiconductor Optoelectronics;2008-03
2 Xie Lingling,Gong Renxi,Huang Yang (School of Electrical Engineering,Guangxi University,Nanning 530004,China);Effect of Absorption Factor on Output Voltage Across the Load in GaAs Photoconductive Switches[J];Semiconductor Technology;2008-07
3 DAI Hui-ying~(1,2) LI Xi-yang~1 HOU Jun-yan~1 YANG Li-na~1 1 Institute of Science,Engineering University of Airforce,Xi' an 710051.China; 2 Xian University of Science and Technlogy,Xian 710048,China;The Research of the THz Ultra-wideband Anti-stealth-Aircraft Radar Using Semi-Insulating GaAs Photoconductive-Switches[J];Journal of Projectiles,Rockets,Missiles and Guidance;2006-S2
4 JIA Wan-li,SHI Wei,JI Wei-li,LI Meng-xia(Department of Physics,Xi'an University of Technology,Xi'an,Shaanxi 710054,China);Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches[J];Acta Electronica Sinica;2008-09
5 LIU Hong,QU Guang-hui,WANG Xin-mei,TIAN Li-qiang,LIU Zheng,XU Ming,SHI Wei(Applied Physics Department,Xi'an University of Technology,Xi'an 710048,China);High-voltage Nanoseconds GaAs Photoconductive Switch and Its Breakdown Characteristic[J];High Voltage Engineering;2009-01
6 ZHENG Wei1,YANG Feng1,ZHOU Hai-jing2(1.School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;2.Institute of Applied Physics and Computational Mathematics,Beijing 100088,China);Design of bipolar variable flare angle time-domain antenna[J];Electronic Design Engineering;2009-09
7 PENG Xiaojin(Ankang Vocational Technical College,AnKang 725000,Shaanxi,China);Causes for the Filament Current of GaAs Switches in the Non-Linear Mode[J];Journal of Ankang University;2012-04
8 ZHOU Yu-ming,JIN Ai-jin,and FEND De-ren(School of Electrical Engineering,Anhui University of Technology Maanshan Anhui 243002);Simulation of Vanadium Doped Concentration on the Effect of Characteristics of SiC Photoconducting Switches[J];Journal of University of Electronic Science and Technology of China;2012-06
9 Zhang Liwei1 Shang Liping1 Tang Jinlong2 Xia Zuxue1 Deng Hu1 1 School of Information Engineering,Southwest University of Science and Technology,Mianyang,Sichuan621010,China2 School of Science,Southwest University of Science and Technology,Mianyang,Sichuan621010,China;Two-Valley Effect on GaAs Photoconductive Antenna′s Carrier Transport[J];Laser & Optoelectronics Progress;2012-10
10 PAN Wu,HUANG Shu-lin,LI Guo-xin,LI Ting-ting,TIAN Hai-yan(College of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China);Theoretical study of terahertz radiation through InSb photoconduction[J];Laser & Infrared;2013-04
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved