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Analysis and Characteristic of High Gain Ultra Fast GaAs Photoconductive Switches

SHI Wei 1,LIANG Zhen xian 2(Xi′an University of Technology,Xi′an 710048,China;2 Xi′an Jiaotong University,Xi′an 710049,China)  
A model of luminous charge domain to analyze the characteristic of photoconductive switches has been first proposed.The switching procedure of high gain photoconductive switches can be described with an optically activated luminous charge domain.The formation,radiation transit and accumulations of the charge domain are related with the triggering and sustaining phase of photoconductive switches,respectively.
【Fund】: 国家自然科学基金!(No .5940 70 0 6);; 陕西省教委专项科学基金!(No .99JK1 98)
【CateGory Index】: TN201
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1 WU Ming-he1,2,ZHENG Xiao-ming2,SUN Yun-qing1,CUI Hai-juan1,and ZENG Gang1(1.School of Physical Electronics,University of Electronic Science and Technology of China Chengdu 610054; 2.School of Dentistry and Health Sciences,Charles Sturt University,NSW 2678 Australia);Impact of Storage Capacitor on the Modes of PCSS[J];Journal of University of Electronic Science and Technology of China;2011-02
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