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《ACTA ELECTRONICA SINICA》 2000-02
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Analysis and Characteristic of High Gain Ultra Fast GaAs Photoconductive Switches

SHI Wei 1,LIANG Zhen xian 2(Xi′an University of Technology,Xi′an 710048,China;2 Xi′an Jiaotong University,Xi′an 710049,China)  
A model of luminous charge domain to analyze the characteristic of photoconductive switches has been first proposed.The switching procedure of high gain photoconductive switches can be described with an optically activated luminous charge domain.The formation,radiation transit and accumulations of the charge domain are related with the triggering and sustaining phase of photoconductive switches,respectively.
【Fund】: 国家自然科学基金!(No .5940 70 0 6);; 陕西省教委专项科学基金!(No .99JK1 98)
【CateGory Index】: TN201
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1 SHI Wei~1,JI Wei-li~1,ZHAO Wei~2 (1.Applied Physics Department,Xi'an University of Technology,Xi'an,Shaanxi 710048,China; 2.State Key Laboratory of Transient Optics Technology,Xi'an Institute of Optics and Precision Mechanics, The Chinese Academy of Sciences,Xi'an,Shaanxi 710068,China);Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches[J];Acta Electronica Sinica;2004-11
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